Fengyuan Mao, Zhijian Chen, Bin Li, Zhaohui Wu, Xinhuang Chen, Siyuan Yang
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引用次数: 0
Abstract
A 24.8–29.1-GHz four-stage gallium nitride (GaN) low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is presented in this letter which is fabricated in a 0.15-μm GaN-on-SiC process. The proposed GaN LNA utilizes gate/drain bypass networks and source degeneration (SD) to achieve both 0–40-GHz unconditional stability and broadband simultaneous noise and input matching (SNIM). The measured results show a peak gain of 19.9 dB with a 3-dB bandwidth of 4.3 GHz and a low noise figure (NF) of 1.58–2.57 dB. The input and output return losses are better than 11 dB and the output-referred third-order intercept point (OIP3) is greater than 21 dBm. The presented LNA has a core area of 4.2 mm2 and consumes a power dissipation of 150 mW. Compared with other state-of-the-art GaN LNA designs, the proposed LNA exhibits competitive NF and overall performance.
期刊介绍：
Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas.
- RF, Microwave, and Millimeter Waves
- Antennas and Propagation
- Submillimeter-Wave and Infrared Technology
- Optical Engineering
All papers are subject to peer review before publication
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