Quantum efficiency enhancement of reflective GaAs photocathodes with exponential-doping structure generating a favorable built-in electric field.

IF 3.2 2区 物理与天体物理 Q2 OPTICS Optics express Pub Date : 2024-11-04 DOI:10.1364/OE.537424
Yu Jiang, Yijun Zhang, Zehao Tong, Song Tang, Tao Guo, Yunsheng Qian, Jianning Sun, Lin Ren, Muchun Jin, Feng Shi, Hongchang Cheng, Yugang Zeng
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Abstract

The rapid development of GaAs photocathodes has led to an increased focus on the attainment of high quantum efficiency. Three types of exponential-doping structures with a high to low doping concentration distribution from the interior to the surface are proposed for reflective GaAs emission layers. These three structures generate different built-in electric fields that facilitate photoelectron emission. The one-dimensional continuity equations for the increasing, constant, and decreasing types of built-in electric fields are derived, respectively. The electron concentration distribution and quantum efficiency varying with the wavelength are solved numerically by the finite difference method. The simulation results indicate that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is superior to that with the constant built-in electric field, while the GaAs photocathode with the decreasing type of built-in electric field shows the worst performance. Then, the designed GaAs photocathodes with the increasing and constant types of built-in electric fields are grown by metal-organic chemical vapor deposition and activated by cesium-oxygen alternating deposition. The measured spectral response curves show that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is higher in the whole band than that with the constant type of built-in electric field. In addition, the exponential-doping structure generating the increasing type of built-in electric field is beneficial for improving the surface potential barrier and increasing the surface electron escape probability.

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具有指数掺杂结构的反射型砷化镓光电阴极的量子效率提升,可产生有利的内置电场。
随着砷化镓光电阴极的快速发展,人们越来越关注如何实现高量子效率。针对反射式砷化镓发射层提出了三种指数掺杂结构,其掺杂浓度分布从内部到表面从高到低。这三种结构会产生不同的内置电场,从而促进光电子发射。分别推导出了增大、恒定和减小类型内置电场的一维连续性方程。利用有限差分法对随波长变化的电子浓度分布和量子效率进行了数值求解。仿真结果表明,内置电场递增型砷化镓光电阴极的量子效率优于内置电场不变型,而内置电场递减型砷化镓光电阴极的表现最差。然后,用金属有机化学气相沉积法生长出内置电场递增型和内置电场恒定型的砷化镓光电阴极,并用铯氧交替沉积法进行活化。测量的光谱响应曲线表明,内置电场递增型砷化镓光电阴极在整个波段的量子效率均高于内置电场恒定型砷化镓光电阴极。此外,增大型内置电场产生的指数掺杂结构有利于改善表面势垒和提高表面电子逸出概率。
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来源期刊
Optics express
Optics express 物理-光学
CiteScore
6.60
自引率
15.80%
发文量
5182
审稿时长
2.1 months
期刊介绍: Optics Express is the all-electronic, open access journal for optics providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and photonics.
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