Electrical transport properties of topological insulator As2Te3 under high pressure

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Physica B-condensed Matter Pub Date : 2024-11-19 DOI:10.1016/j.physb.2024.416757
Yuqiang Li , Yuyao Liu , Qiang Zhang , Chuanzhen Zhao , Jinlu Sun , Yuhong Li , Yang Liu , Pingfan Ning , Yi Liu , Haiying Xing
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Abstract

The electrical transport properties of As2Te3 were studied under high pressure using theoretical and experimental methods. The structural phase transition was observed at around 25 GPa using first-principles calculations, which was reflected in the collapse of the cell volume and the calculation of the enthalpy. The pressure-induced metallization was confirmed at approximately 7 GPa from closed energy bands and density of states, and the resistivity of variable temperature also shown a piece of evidence for metallization at 7.1 GPa. The curves of the electrical parameters at 7 GPa are consistent with the theoretical calculations. In addition, discontinuous changes in carrier parameters were observed at around 15 GPa, which is attributed to the isostructural phase transition of As2Te3. Studying the electrical transport properties of As2Te3 under high pressure, especially its pressure-induced metallization properties, can provide a theoretical basis for its application in storage devices and thermoelectric materials, and help to understand the properties of other A2B3-type compounds under high pressure.

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高压下拓扑绝缘体 As2Te3 的电输运特性
利用理论和实验方法研究了 As2Te3 在高压下的电传输特性。通过第一原理计算,在大约 25 GPa 时观察到了结构相变,这反映在晶胞体积的塌缩和焓的计算中。根据封闭能带和状态密度,在大约 7 GPa 时确认了压力诱导的金属化,变温电阻率也显示了在 7.1 GPa 时金属化的证据。7 GPa 时的电参数曲线与理论计算结果一致。此外,在 15 GPa 左右观察到载流子参数的不连续变化,这归因于 As2Te3 的等结构相变。研究 As2Te3 在高压下的电输运特性,特别是其压力诱导的金属化特性,可为其在存储设备和热电材料中的应用提供理论依据,并有助于了解其他 A2B3 型化合物在高压下的特性。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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