Heusler-based topological quantum catalyst Fe2VAl with obstructed surface states for the hydrogen-evolution reaction

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Physica B-condensed Matter Pub Date : 2024-11-28 DOI:10.1016/j.physb.2024.416773
Yang Li
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Abstract

Topological materials are widely esteemed for their surface metallic states and remarkable carrier mobility, making them effective catalysts for heterogeneous processes. This study showcases the outstanding properties of Fe2VAl, an experimentally prepared compound that enjoys a Cu2MnAl-type Heusler structure. It specifically highlights the presence of robust obstructed surface states on the (001) surface and the outstanding catalytic effectiveness of the compound in electrochemical hydrogen evolution processes (HER). The band structure calculation in this work shows that it is an obstructed atomic semimetal with a pseudo-gap of −0.088 eV (nearly −0.1 eV). These findings align with the previous optical conductivity measurements conducted at low temperatures, which also showed a similar pseudo-gap. This work suggests that the easily prepared Fe2VAl compound may be an excellent topological quantum material for topological catalysis.
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基于heusler的表面态受阻的拓扑量子催化剂Fe2VAl用于析氢反应
拓扑材料因其表面金属态和显著的载流子迁移率而受到广泛的重视,使其成为多相过程的有效催化剂。本研究展示了Fe2VAl的优异性能,这是一种实验制备的具有cu2mnal型Heusler结构的化合物。它特别强调了(001)表面上存在强大的阻塞表面态,以及该化合物在电化学析氢过程(HER)中的杰出催化效果。本文的能带结构计算表明,它是一种赝隙为- 0.088 eV(接近- 0.1 eV)的受阻原子半金属。这些发现与之前在低温下进行的光学电导率测量相一致,后者也显示出类似的伪间隙。这一工作表明,易于制备的Fe2VAl化合物可能是一种用于拓扑催化的优良拓扑量子材料。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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