Processes of Coating Formation by Pulsed MOCVD in the ZrO2–HfO2 System

Abstract

The ZrO₂–HfO₂ oxide films are prepared by pulsed chemical vapor deposition using volatile organometallic precursors. It is shown that the morphology, thickness, and uniformity of the resulting coatings are affected by the mode of reaction space organization. A 360 nm thick oxide coating is obtained by introducing the precursor vapor and the reactant gas into the reactor through an earlier elaborated system of separate reaction components supply. The atomic force microscopy data show that the resulting surface is almost smooth and has an arithmetic average roughness of a few nanometers. Current-voltage and capacitance-voltage characteristics of the obtained ZrO₂–HfO₂ oxide coatings are studied. It is noted that the breakdown electric field is almost independent of the oxide coating thickness (0.1-0.48 MV/cm) in the interval of 225-325 nm. The breakdown electric field increases as the oxide film thickness increases from 325 nm to 360 nm. The dependence of the dielectric constant on the oxide film thickness is determined from the measured capacitance-voltage characteristics of the obtained ZrO₂–HfO₂ films. It is shown that this dependence depends linearly on the film thickness.