A CMOS Flash LiDAR Sensor With In-Pixel Zoom Histogramming Time-to-Digital Converters

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-12-04 DOI:10.1109/JSSC.2024.3508614
Bumjun Kim;Seonghyeok Park;Su-Hyun Han;Jung-Hoon Chun;Jaehyuk Choi;Seong-Jin Kim
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Abstract

This article presents a solid-state flash light detection and ranging (LiDAR) sensor with an in-pixel zoom histogramming time-to-digital converter (hTDC). The proposed zoom hTDC combines two different conversion techniques such as the direct time-of-flight (ToF) and indirect ToF (iToF), realizing a two-step coarse-fine TDC architecture based on a single 10-b histogramming-bit (Hb) time-gated event/linear up-down counter (UDC). A 6-b time-bit (Tb) coarse TDC is implemented with a successive approximation (SA) algorithm in that the ToF value is found out by the binary search manner, dramatically reducing the number of memories from $2{^{T_{\text {b}}} \times \text { H}_{\text {b}}}$ to ${T_{\text {b}}} {+}$ Hb. The UDC is utilized for counting the single-photon avalanche diode (SPAD) events for calculating the histogram in the coarse SA-hTDC mode, while it is reconfigured to the up-counter for estimating the phase difference which is taken by a ratio of linear counts between adjacent coarse bins in the fine iToF mode. Fabricated in a 110-nm CIS process, the prototype flash LiDAR sensor with a $100{\times } 76$ pixel array demonstrates a 20-fps depth imaging acquisition in indoor environments. A 10-fps depth imaging at outdoor environments up to 10-m range consumes 154.5 mW. The maximum detectable range of 50 m is measured, and the depth resolutions of both to-digital converters (TDCs) are given by 150 and 9 cm, respectively, under an infrared (IR) emitter with a peak power of 75 W and a duty cycle of 0.08%.
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具有像素内变焦直方图时间-数字转换器的CMOS闪光激光雷达传感器
本文介绍了一种具有像素变焦直方图时间-数字转换器(hTDC)的固态闪光探测和测距(LiDAR)传感器。提出的变焦hTDC结合了直接飞行时间(ToF)和间接飞行时间(iToF)两种不同的转换技术,实现了基于单个10-b直方图位(Hb)时间门控事件/线性上下计数器(UDC)的两步粗-精TDC架构。采用逐次逼近(SA)算法实现6-b时间位(Tb)粗TDC, ToF值采用二分查找的方式确定,存储器数量从$2{^{T_{\text {b}}} \次\text {H}_{\text {b}}}$大幅减少到${T_{\text {b}}} {+}$ Hb。UDC用于计数单光子雪崩二极管(SPAD)事件,用于计算粗SA-hTDC模式下的直方图,而在细iToF模式下,UDC被重新配置为上行计数器,用于估计相位差,该相位差由相邻粗箱之间的线性计数比取。在110纳米CIS工艺中制造,具有100 × 76像素阵列的原型闪光激光雷达传感器在室内环境中展示了20 fps的深度成像采集。在10米范围的室外环境中,10帧/秒的深度成像消耗154.5毫瓦。在峰值功率为75 W、占空比为0.08%的红外(IR)发射器下,测量到的最大可探测范围为50 m,两种数字转换器(tdc)的深度分辨率分别为150 cm和9 cm。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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