An Intrinsically PVT Robust 10-bit 2.6-GS/s Dynamic Pipelined ADC With Dual-Path Time-Assisted Residue Generation Scheme

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-12-04 DOI:10.1109/JSSC.2024.3507915
Junyan Hao;Minglei Zhang;Zijian Liu;Yanbo Zhang;Shubin Liu;Zhangming Zhu;Yan Zhu;Rui P. Martins;Chi-Hang Chan
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Abstract

This article presents a single-channel 10-bit pipelined analog-to-digital converter (ADC) with a dual-path time-assisted residue generation (TARG) technique running at 2.6 GS/s. A voltage-to-time converter (VTC) driving a current-integrating capacitor array through a time pulse facilitates the inter-stage residue amplification, which decouples the constraint between linearity and speed of the residue generation. The time residue path shortens the residue generation period with a lower linearity requirement and quantizes 4 bits simultaneously, speeding up the sub-stage ADC conversion; the voltage residue path achieves a dedicated inter-stage gain with high linearity and relaxed timing, suppressing noise of its subsequent stages. Furthermore, the inherent complementation characteristic of the voltage-time–voltage (V-T–V) conversion in the TARG scheme makes the prototype ADC intrinsically robust to process, voltage, and temperature (PVT) variations. Fabricated in a 28-nm CMOS process, the 2.6-GS/s pipelined ADC achieves a 51.4-dB signal-to-noise and distortion ratio (SNDR) and a 71.0-dB spurious-free dynamic range (SFDR) with a Nyquist input at a 0.9-V power supply, exhibiting a Walden figure-of-merit of 17.6 fJ/conversion-step. The SNDR varies by 1.25 and 1.55 dB across a supply variation of ±5% and a temperature range of ${-} 40~{^{\circ }}$ C to $85~{^{\circ }}$ C, respectively.
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基于双径时间辅助残馀生成方案的10位动态流水线ADC
本文介绍了一种单通道10位流水线模数转换器(ADC),其双路时间辅助剩余产生(TARG)技术运行速度为2.6 GS/s。电压-时间变换器(VTC)通过时间脉冲驱动积流电容阵列,实现了级间残差放大,从而解耦了残差产生的线性度和速度之间的约束。时间剩余路径缩短了剩余产生周期,线性度要求较低,同时量化4位,加快了子级ADC转换速度;电压剩余路径实现了专用的级间增益,具有高线性度和宽松的时序,抑制了其后续阶段的噪声。此外,TARG方案中电压-时间-电压(V-T-V)转换的固有互补特性使原型ADC对工艺、电压和温度(PVT)变化具有固有的鲁棒性。采用28纳米CMOS工艺制造的2.6 gs /s流水线ADC,在0.9 v电源下,采用Nyquist输入,实现了51.4 db的信噪比和失真比(SNDR)和71.0 db的无杂散动态范围(SFDR),瓦尔登品质系数为17.6 fJ/转换步长。当电源变化为±5%,温度范围为${-}40~{^{\circ}}$ C至$85~{^{\circ}}$ C时,SNDR分别变化1.25和1.55 dB。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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