{"title":"An Intrinsically PVT Robust 10-bit 2.6-GS/s Dynamic Pipelined ADC With Dual-Path Time-Assisted Residue Generation Scheme","authors":"Junyan Hao;Minglei Zhang;Zijian Liu;Yanbo Zhang;Shubin Liu;Zhangming Zhu;Yan Zhu;Rui P. Martins;Chi-Hang Chan","doi":"10.1109/JSSC.2024.3507915","DOIUrl":null,"url":null,"abstract":"This article presents a single-channel 10-bit pipelined analog-to-digital converter (ADC) with a dual-path time-assisted residue generation (TARG) technique running at 2.6 GS/s. A voltage-to-time converter (VTC) driving a current-integrating capacitor array through a time pulse facilitates the inter-stage residue amplification, which decouples the constraint between linearity and speed of the residue generation. The time residue path shortens the residue generation period with a lower linearity requirement and quantizes 4 bits simultaneously, speeding up the sub-stage ADC conversion; the voltage residue path achieves a dedicated inter-stage gain with high linearity and relaxed timing, suppressing noise of its subsequent stages. Furthermore, the inherent complementation characteristic of the voltage-time–voltage (V-T–V) conversion in the TARG scheme makes the prototype ADC intrinsically robust to process, voltage, and temperature (PVT) variations. Fabricated in a 28-nm CMOS process, the 2.6-GS/s pipelined ADC achieves a 51.4-dB signal-to-noise and distortion ratio (SNDR) and a 71.0-dB spurious-free dynamic range (SFDR) with a Nyquist input at a 0.9-V power supply, exhibiting a Walden figure-of-merit of 17.6 fJ/conversion-step. The SNDR varies by 1.25 and 1.55 dB across a supply variation of ±5% and a temperature range of <inline-formula> <tex-math>${-} 40~{^{\\circ }}$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$85~{^{\\circ }}$ </tex-math></inline-formula>C, respectively.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 7","pages":"2545-2557"},"PeriodicalIF":5.6000,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10777035/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article presents a single-channel 10-bit pipelined analog-to-digital converter (ADC) with a dual-path time-assisted residue generation (TARG) technique running at 2.6 GS/s. A voltage-to-time converter (VTC) driving a current-integrating capacitor array through a time pulse facilitates the inter-stage residue amplification, which decouples the constraint between linearity and speed of the residue generation. The time residue path shortens the residue generation period with a lower linearity requirement and quantizes 4 bits simultaneously, speeding up the sub-stage ADC conversion; the voltage residue path achieves a dedicated inter-stage gain with high linearity and relaxed timing, suppressing noise of its subsequent stages. Furthermore, the inherent complementation characteristic of the voltage-time–voltage (V-T–V) conversion in the TARG scheme makes the prototype ADC intrinsically robust to process, voltage, and temperature (PVT) variations. Fabricated in a 28-nm CMOS process, the 2.6-GS/s pipelined ADC achieves a 51.4-dB signal-to-noise and distortion ratio (SNDR) and a 71.0-dB spurious-free dynamic range (SFDR) with a Nyquist input at a 0.9-V power supply, exhibiting a Walden figure-of-merit of 17.6 fJ/conversion-step. The SNDR varies by 1.25 and 1.55 dB across a supply variation of ±5% and a temperature range of ${-} 40~{^{\circ }}$ C to $85~{^{\circ }}$ C, respectively.
期刊介绍:
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.