A 0.38-mW 200-kHz-BW Digital-Intensive Single-Opamp Fourth-Order Continuous-Time Delta-Sigma Modulator With Third-Order Digital Noise Coupling in 28-nm CMOS

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-12-17 DOI:10.1109/JSSC.2024.3513442
Kent Edrian Lozada;Ye-Dam Kim;Ho-Jin Kim;Youngjae Cho;Michael Choi;Seung-Tak Ryu
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Abstract

This article presents a digital-intensive, single-opamp, 4th-order continuous-time delta-sigma modulator (CT DSM) architecture with a simple and low-power 3rd-order digital noise-coupling (DNC) assisted by a successive approximation register (SAR). To address the limited maximum stable amplitude (MSA) issue in high-order noise coupling, a digital back-end integrator is adopted to suppress the large input signal at the quantizer’s input, achieving an MSA of −1.6 dBFS even with aggressive noise shaping in a single-loop design. A digital adder-free 3rd-order DNC filter is introduced, which performs the addition directly in the charge domain using the capacitor digital-to-analog converter (DAC) in the SAR quantizer. Fabricated in 28-nm CMOS, the prototype demonstrates that a high-order CT DSM can be realized with a reduced analog burden by shifting most of the signal processing of the loop filter (LF) to the digital domain. It achieves a peak signal-to-noise and distortion ratio (SNDR), signal-to-noise ratio (SNR), and dynamic range (DR) of 89.0, 89.2, and 92.1 dB, respectively, across a 200-kHz bandwidth while consuming only 0.38 mW from a 1.1-V supply. The Schreier figure of merit (FoM) is 179.3 dB, and the Walden FoM is 41.2 fJ/conv.-step.
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含三阶数字噪声耦合的0.38 mw 200 khz - bw数字密集型单运放四阶连续δ - σ调制器
本文提出了一种数字密集型、单运放、四阶连续时间δ - σ调制器(CT DSM)结构,该结构具有简单、低功耗的三阶数字噪声耦合(DNC),并由逐次逼近寄存器(SAR)辅助。为了解决高阶噪声耦合中有限的最大稳定幅值(MSA)问题,采用数字后端积分器在量化器输入处抑制大输入信号,即使在单回路设计中具有积极的噪声整形,也能实现- 1.6 dBFS的最大稳定幅值。介绍了一种数字无加法器的三阶DNC滤波器,该滤波器利用SAR量化器中的电容数模转换器(DAC)直接在电荷域中进行加和。在28纳米CMOS中制作的原型表明,通过将环路滤波器(LF)的大部分信号处理转移到数字域,可以在减少模拟负担的情况下实现高阶CT DSM。在200 khz带宽范围内,它的峰值信噪比和失真比(SNDR)、信噪比(SNR)和动态范围(DR)分别为89.0、89.2和92.1 dB,而1.1 v电源的功耗仅为0.38 mW。Schreier优值(FoM)为179.3 dB, Walden优值(FoM)为41.2 fJ/ vs .-step。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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