A 26-GΩ Input-Impedance 112-dB Dynamic-Range Two-Step Direct-Conversion Front-End With Improved Δ-Modulation for Wearable Biopotential Acquisition

IF 5.6 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-12-20 DOI:10.1109/JSSC.2024.3514745

Yuzhi Hao;Hua Fan;Yong Lian;Mingyi Chen

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Abstract

This article presents a high dynamic range (DR) direct conversion front-end (Direct-FE) IC enabling the wearable acquisition of weak bio-potentials superposed onto large motion artifacts (MAs). The prototype IC has been fabricated in a standard 0.18-

$\mu $

m CMOS process. Benefiting from the proposed feedback (FB) two-step direct conversion architecture with an improved

$\Delta $

-modulation, as well as a novel differential difference amplifier (DDA) and a dynamic-element-matching (DEM) technique, it achieves a peak input range of 3.56 VPP, an input-referred noise (IRN) of

$2.2~{\mu }$

Vrms, an input impedance of 26 G

$\Omega $

, and a ±1.8-V electrode dc offset (EDO) tolerance, while consuming only 63-

$\mu $

W power. Compared with state-of-the-art Direct-FEs, the proposed work demonstrates an advanced DR (112 dB) and a competitive FOMDR (175 dB). The prototype IC has been validated based on in vivo experiments, demonstrating its capability for artifact-tolerant wearable bio-potential acquisition.

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一种26-G $\Omega$输入阻抗112-dB动态范围两步直接转换前端，改进$\Delta$调制用于可穿戴生物电位采集

本文提出了一种高动态范围（DR）直接转换前端（direct - fe）集成电路，可以实现叠加在大运动伪影（MAs）上的弱生物电位的可穿戴采集。原型IC已在标准的0.18- $\mu $ m CMOS工艺中制造。得益于改进$\Delta $ -调制的反馈（FB）两步直接转换架构，以及新型差分放大器（DDA）和动态元件匹配（DEM）技术，该系统的峰值输入范围为3.56 VPP，输入参考噪声（IRN）为$2.2~{\mu }$ Vrms，输入阻抗为26 G $\Omega $，电极直流偏置（EDO）公差为±1.8 v，功耗仅为63- $\mu $ W。与最先进的Direct-FEs相比，拟议的工作展示了先进的DR （112 dB）和具有竞争力的FOMDR （175 dB）。该原型集成电路已经过体内实验验证，证明其具有耐受人工制品的可穿戴生物电位采集能力。

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来源期刊

IEEE Journal of Solid-state Circuits 工程技术-工程：电子与电气

CiteScore

11.00

自引率

20.40%

发文量

351

审稿时长

3-6 weeks

期刊介绍： The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.