Mott Transitions: A Brief Review

IF 4.4 Q1 OPTICS Advanced quantum technologies Pub Date : 2024-10-01 DOI:10.1002/qute.202200186
Mukul S. Laad, Luis Craco
{"title":"Mott Transitions: A Brief Review","authors":"Mukul S. Laad,&nbsp;Luis Craco","doi":"10.1002/qute.202200186","DOIUrl":null,"url":null,"abstract":"<p>This short review provides an overview of some aspects of the current understanding of Mott insulators and Mott metal-insulator transitions. The development of this field is traced, from earliest classical views to the state-of-the-art picture based on methods of quantum field theory. A quasi-local view point, characterizing “pure” Mott physics, throughout this article is focused on. Following an extensive discussion on Mott transitions in one- and multi-orbital Hubbard models, progress is reviewed in first-principles correlation-based approaches in achieving a quantitative description of insulator-metal transitions in two celebrated Mott materials. Building thereupon, success of such approaches in providing microscopic justification for the famed Mott criterion, as well as in the attempts to model emerging devices is reviewed briefly. The study is concluded with a discussion of a class of Mott insulators modeled by the Kugel-Khomskii model, and discuss how progress in the understanding of novel quantum liquid-crystal-like order provides an attractive opportunity to gain insight into topologically ordered states and topological-to-trivial phase transitions for certain quantum spin models in terms of a dual description in terms of Landau-like symmetry breaking.</p>","PeriodicalId":72073,"journal":{"name":"Advanced quantum technologies","volume":"7 12","pages":""},"PeriodicalIF":4.4000,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced quantum technologies","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/qute.202200186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
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Abstract

This short review provides an overview of some aspects of the current understanding of Mott insulators and Mott metal-insulator transitions. The development of this field is traced, from earliest classical views to the state-of-the-art picture based on methods of quantum field theory. A quasi-local view point, characterizing “pure” Mott physics, throughout this article is focused on. Following an extensive discussion on Mott transitions in one- and multi-orbital Hubbard models, progress is reviewed in first-principles correlation-based approaches in achieving a quantitative description of insulator-metal transitions in two celebrated Mott materials. Building thereupon, success of such approaches in providing microscopic justification for the famed Mott criterion, as well as in the attempts to model emerging devices is reviewed briefly. The study is concluded with a discussion of a class of Mott insulators modeled by the Kugel-Khomskii model, and discuss how progress in the understanding of novel quantum liquid-crystal-like order provides an attractive opportunity to gain insight into topologically ordered states and topological-to-trivial phase transitions for certain quantum spin models in terms of a dual description in terms of Landau-like symmetry breaking.

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莫特过渡:简要回顾
这篇简短的综述概述了目前对莫特绝缘体和莫特金属-绝缘体过渡的一些认识。这个领域的发展被追溯,从最早的经典观点到基于量子场论方法的最先进的图像。准局部的观点,特征的“纯”莫特物理,在整个文章的重点。在对单轨道和多轨道哈伯德模型中的莫特跃迁进行了广泛的讨论之后,回顾了基于第一线原理的相关方法在实现两种著名的莫特材料中绝缘体-金属跃迁的定量描述方面的进展。在此基础上,这些方法在为著名的莫特准则提供微观理由方面的成功,以及在对新兴设备建模的尝试中,我们将简要地进行回顾。本研究最后讨论了一类由Kugel-Khomskii模型模拟的Mott绝缘体,并讨论了如何在理解新型量子类液晶有序方面取得进展,为深入了解某些量子自旋模型的拓扑有序态和拓扑到平凡相变提供了一个有吸引力的机会,这些模型是根据类朗道对称破缺的对偶描述来进行的。
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CiteScore
7.90
自引率
0.00%
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