Topological Properties of Reflection Zeros of Optical Differentiators Based on Layered Metal-Dielectric-Metal Structures

IF 0.8 Q4 OPTICS Optical Memory and Neural Networks Pub Date : 2024-12-23 DOI:10.3103/S1060992X24700607
A. I. Kashapov, E. A. Bezus, D. A. Bykov, A. A. Mingazov, L. L. Doskolovich
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Abstract

We investigate the topological properties of reflection zeros of three-layer structures consisting of a dielectric layer sandwiched between two metal layers, which can be used as optical differentiators. We show that the reflection zeros possess non-zero topological charges, which makes them topologically protected. With a small perturbation of the parameters of the structure (e.g., a change in one of the layer thicknesses), the reflection zero does not disappear, but shifts in the parameter space, i.e., appears at different wavelength and angle of incidence. We demonstrate that with a further parameter change, two zeros with opposite topological charges (+1 and –1) approach each other, merge, and then disappear. We believe that the obtained results give useful insight regarding the operation of layered metal-dielectric-metal structures possessing reflection zeros.

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基于层状金属-介电-金属结构的光学微分器反射零的拓扑性质
本文研究了由介电层夹在两层金属层之间组成的三层结构的反射零的拓扑性质,该结构可以用作光学微分器。我们证明了反射零具有非零的拓扑电荷,这使得它们具有拓扑保护。当结构参数受到微小的扰动(如其中一层厚度发生变化)时,反射零不会消失,而是在参数空间中发生位移,即在不同的波长和入射角处出现。我们证明,随着参数的进一步变化,两个具有相反拓扑电荷(+1和-1)的零彼此接近,合并,然后消失。我们认为所得结果对具有反射零的层状金属-介电-金属结构的操作提供了有用的见解。
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来源期刊
CiteScore
1.50
自引率
11.10%
发文量
25
期刊介绍: The journal covers a wide range of issues in information optics such as optical memory, mechanisms for optical data recording and processing, photosensitive materials, optical, optoelectronic and holographic nanostructures, and many other related topics. Papers on memory systems using holographic and biological structures and concepts of brain operation are also included. The journal pays particular attention to research in the field of neural net systems that may lead to a new generation of computional technologies by endowing them with intelligence.
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