A 2.2-ps Time-of-Flight Resolution Frequency-Domain fNIRS Readout IC With a Dynamic Architecture and Cross-Coupling-Free Intensity and Phase-to-Digital Converter

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-12-23 DOI:10.1109/JSSC.2024.3516881
Zhouchen Ma;Yuxiang Lin;Cheng Chen;Xiang'ao Qi;Yongfu Li;Kea-Tiong Tang;Fa Wang;Tianhong Zhang;Guoxing Wang;Jian Zhao
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Abstract

This article presents a fully integrated frequency-domain (FD) functional near-infrared spectroscopy (fNIRS) detection integrated circuit (IC) designed for non-invasive measurement of tissue metabolite optical properties. Departing from traditional static architectures, a dynamic light sensing architecture is proposed, which allows for the decoupling of time-of-flight (ToF) resolution from the system power consumption through duty-cycle modulation, thereby enhancing energy efficiency. In addition, to improve the measurement precision of both ToF and intensity loss, an inter-stabilized intensity and phase-to-digital converter (IS-IPDC) is proposed to resolve coupling issues between intensity and phase quantification. The chip is implemented in a standard 180-nm CMOS process. Test results indicate that the light ToF resolution is 2.2 ps within a 10-Hz bandwidth, while consuming only 12.5 mW. Thanks to its high resolution and crosstalk-free characteristics, compared with the high-precision instrument-based reference system, the maximum measurement errors for the absorption coefficient ( $\boldsymbol {\mu _{a}}$ ) and reduced scattering coefficient ( $\boldsymbol {\mu '_{s}}$ ) are 4.2% and 4%, respectively. Finally, comprehensive in vitro and in vivo demonstrations demonstrate the IC’s capabilities for metabolic imaging and long-term monitoring.
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具有动态结构和无交叉耦合强度和相位-数字转换器的2.2 ps飞行时间分辨率频域fNIRS读出集成电路
本文提出了一种全集成频域(FD)功能近红外光谱(fNIRS)检测集成电路(IC),用于组织代谢物光学特性的无创测量。在传统静态架构的基础上,提出了一种动态光传感架构,通过占空比调制将飞行时间(ToF)分辨率与系统功耗解耦,从而提高了能效。此外,为了提高ToF和强度损耗的测量精度,提出了一种强度-相位-数字间稳定转换器(is - ipdc)来解决强度和相位量化之间的耦合问题。该芯片采用标准的180纳米CMOS工艺。测试结果表明,在10hz带宽内,光ToF分辨率为2.2 ps,而功耗仅为12.5 mW。由于其高分辨率和无串扰特性,与高精度仪器基准系统相比,吸收系数($\boldsymbol {\mu _{a}}$)和减小散射系数($\boldsymbol {\mu '_{s}}$)的最大测量误差分别为4.2%和4%。最后,全面的体外和体内实验证明了IC在代谢成像和长期监测方面的能力。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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