N. N. Melnik, V. V. Tregulov, G. N. Skoptsova, D. S. Kostsov
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Abstract
We study the effect of technological parameters on the characteristics of the Fano resonance in semiconductor structures formed on silicon single-crystal substrates using thermal diffusion of boron. The Fano resonance is investigated using Raman spectroscopy. It is shown that the formation of porous silicon films on the surface of a single-crystal substrate expands the possibilities of fabricating structures with specified Fano resonance parameters, compared to samples without a porous film.
期刊介绍：
Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.
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