{"title":"Effect of defects on ballistic transport in a bilayer SnS2 based junction with Co intercalated electrodes","authors":"Miao Liu, Huan Wang, Xiaojie Liu, Yin Wang, Haitao Yin","doi":"10.1039/d4cp03605k","DOIUrl":null,"url":null,"abstract":"This study theoretically investigates the defect-related electronic structure and transport properties in a device where a semiconductor bilayer SnS2 (BL-SnS2) serves as the central scattering region and bilayer SnS2 with cobalt atoms intercalation (Co-SnS2) as metallic electrodes. The Co-SnS2/BL-SnS2 junction forms an ohmic contact, which is robust to defects. Low contact resistance of 52.1 Ω·μm and 56.2 Ω·μm are obtained in the zigzag (ZZ) and armchair (AC) transport directions, respectively. Defects, whether near the interface or in the middle of the central region, reduce the barrier between metal and semiconductor and the contact resistance. In particular, defects in the middle of the central region introduce impurity states and may result in resonant tunneling processes. It causes leakage current in the AC direction but not in the ZZ direction because impurity-associated transmission peaks in the latter are always outside the bias window.","PeriodicalId":99,"journal":{"name":"Physical Chemistry Chemical Physics","volume":"14 1","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physical Chemistry Chemical Physics","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1039/d4cp03605k","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
This study theoretically investigates the defect-related electronic structure and transport properties in a device where a semiconductor bilayer SnS2 (BL-SnS2) serves as the central scattering region and bilayer SnS2 with cobalt atoms intercalation (Co-SnS2) as metallic electrodes. The Co-SnS2/BL-SnS2 junction forms an ohmic contact, which is robust to defects. Low contact resistance of 52.1 Ω·μm and 56.2 Ω·μm are obtained in the zigzag (ZZ) and armchair (AC) transport directions, respectively. Defects, whether near the interface or in the middle of the central region, reduce the barrier between metal and semiconductor and the contact resistance. In particular, defects in the middle of the central region introduce impurity states and may result in resonant tunneling processes. It causes leakage current in the AC direction but not in the ZZ direction because impurity-associated transmission peaks in the latter are always outside the bias window.
期刊介绍:
Physical Chemistry Chemical Physics (PCCP) is an international journal co-owned by 19 physical chemistry and physics societies from around the world. This journal publishes original, cutting-edge research in physical chemistry, chemical physics and biophysical chemistry. To be suitable for publication in PCCP, articles must include significant innovation and/or insight into physical chemistry; this is the most important criterion that reviewers and Editors will judge against when evaluating submissions.
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