Improved capacitance of NiO and nanoporous silicon electrodes for micro-supercapacitor application

IF 2 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY International Journal of Mechanical and Materials Engineering Pub Date : 2025-01-09 DOI:10.1186/s40712-024-00208-1
S. Thamri, M. H. Raouadi
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Abstract

We investigated the NiO/PS/Si and the NiO/Si electrodes to highlight the effect of the PS porous silicon on the enhancement of the electrode performance. We elaborated the PS with the stain etching method, whereas the NiO nickel oxide was synthesized using sol–gel and deposited through the spin coating technique. We showed that PS porous silicon significantly increased the active surface area and improved the electrical and electrochemical properties. Thus, we obtained promising results for NiO/PS/Si. The effective series resistance and interfacial resistances were reduced from 1.8 Ω cm2 and 42 Ω cm2 to 0.05 Ω cm2 and 0.29 Ω cm2 from NiO/Si to NiO/PS/Si, respectively. The capacitance increased from 12.34 µF cm−2 for NiO/Si to 9.64 mF cm−2 for NiO/PS/Si. We found similar capacity values from the CV cyclic voltammetry curves and IS impedance spectroscopy Nyquist plots. We obtained equivalent effective series resistance values from the charge–discharge and Nyquist plots, confirming our results. The NiO/PS/Si electrode showed good stability with only a 3% loss for 5000 galvanostatic cycles. The energy efficiency is estimated from the charge–discharge curves to be 91%.

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用于微型超级电容器的NiO和纳米多孔硅电极的改进电容
我们研究了NiO/PS/Si和NiO/Si电极,以突出PS多孔硅对电极性能的增强作用。我们采用染色蚀刻法制备了PS,而采用溶胶-凝胶法合成了NiO氧化镍,并通过自旋镀膜技术沉积。我们发现,PS多孔硅显著增加了活性表面积,改善了电学和电化学性能。因此,我们在NiO/PS/Si中获得了令人满意的结果。从NiO/Si到NiO/PS/Si,有效串联电阻和界面电阻分别从1.8 Ω cm2和42 Ω cm2降低到0.05 Ω cm2和0.29 Ω cm2。NiO/PS/Si的电容从12.34 μ F cm−2增加到9.64 mF cm−2。我们从CV循环伏安曲线和IS阻抗谱Nyquist图中发现了相似的容量值。我们从充放电图和奈奎斯特图中得到等效的串联有效电阻值,证实了我们的结果。NiO/PS/Si电极表现出良好的稳定性,在5000次恒流循环中损耗仅为3%。从充放电曲线估计能量效率为91%。
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来源期刊
CiteScore
8.60
自引率
0.00%
发文量
1
审稿时长
13 weeks
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