A 27–39-GHz VSWR-Resilient Compact True Power and Gain Sensor With Built-In Sensing Error Compensation for Integrated Power Amplifiers

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2025-01-10 DOI:10.1109/JSSC.2025.3525958
Edward Liu;David Munzer;Jeongseok Lee;Jianping Zeng;Hua Wang
{"title":"A 27–39-GHz VSWR-Resilient Compact True Power and Gain Sensor With Built-In Sensing Error Compensation for Integrated Power Amplifiers","authors":"Edward Liu;David Munzer;Jeongseok Lee;Jianping Zeng;Hua Wang","doi":"10.1109/JSSC.2025.3525958","DOIUrl":null,"url":null,"abstract":"The output power of a transmitter (TX) array can degrade due to a variety of factors, such as device aging, thermal degradation, and load impedance mismatch of the power amplifier due to antenna mutual coupling. Power sensors are needed on phased arrays to detect if any output power degradation occurs. Of these events, we will mainly focus on antenna voltage standing wave ratio (VSWR)-related power degradation, as these events occur on a much shorter timescale compared with long-term effects such as device aging. VSWR-resilient power sensors are required to support these VSWR scenarios. They need to maintain high sensing accuracy and dynamic range (DR) even under unknown complex load impedances in a compact form factor. Therefore, this work presents a broadband VSWR-resilient compact power and gain sensor with integrated power amplifier (PA) that achieves a power sensing error (PSE) of ≤±1.5/3 dB over a VSWR of 2:1/3:1, respectively, from 27 to 39 GHz. Over the same 2:1/3:1 VSWR and frequency range, the DR is >18.69/17.65 dB. The sensor consumes 24.8 mW of power and occupies only 0.044 mm2, ensuring a low overhead implementation for array applications. The sensor is also PA design-agnostic and supports single-ended antennas.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 9","pages":"3125-3135"},"PeriodicalIF":5.6000,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10836230/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The output power of a transmitter (TX) array can degrade due to a variety of factors, such as device aging, thermal degradation, and load impedance mismatch of the power amplifier due to antenna mutual coupling. Power sensors are needed on phased arrays to detect if any output power degradation occurs. Of these events, we will mainly focus on antenna voltage standing wave ratio (VSWR)-related power degradation, as these events occur on a much shorter timescale compared with long-term effects such as device aging. VSWR-resilient power sensors are required to support these VSWR scenarios. They need to maintain high sensing accuracy and dynamic range (DR) even under unknown complex load impedances in a compact form factor. Therefore, this work presents a broadband VSWR-resilient compact power and gain sensor with integrated power amplifier (PA) that achieves a power sensing error (PSE) of ≤±1.5/3 dB over a VSWR of 2:1/3:1, respectively, from 27 to 39 GHz. Over the same 2:1/3:1 VSWR and frequency range, the DR is >18.69/17.65 dB. The sensor consumes 24.8 mW of power and occupies only 0.044 mm2, ensuring a low overhead implementation for array applications. The sensor is also PA design-agnostic and supports single-ended antennas.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种用于集成功率放大器的27 - 39 ghz vswr弹性紧凑型真功率增益传感器,内置传感误差补偿
由于器件老化、热退化、天线互耦导致功率放大器负载阻抗失配等多种因素,发射器(TX)阵列的输出功率会下降。相控阵需要功率传感器来检测输出功率是否下降。在这些事件中,我们将主要关注与天线电压驻波比(VSWR)相关的功率退化,因为与器件老化等长期影响相比,这些事件发生的时间要短得多。VSWR弹性功率传感器需要支持这些VSWR场景。他们需要保持高传感精度和动态范围(DR),即使在未知的复杂负载阻抗在一个紧凑的外形因素。因此,本研究提出了一种带集成功率放大器(PA)的宽带抗VSWR紧凑型功率和增益传感器,在27至39 GHz的VSWR范围内,功率传感误差(PSE)分别为2:1/3:1,≤±1.5/3 dB。在相同的2:1/3:1 VSWR和频率范围内,DR为>18.69/17.65 dB。该传感器功耗为24.8 mW,占地面积仅为0.044 mm2,确保了阵列应用的低开销实现。该传感器与PA设计无关,支持单端天线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
期刊最新文献
A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS Sub- μ A Always-on Drive Loop for 3-Axis MEMS Gyroscope MITTA: A Multi-Task Transformer Accelerator With Mixed Precision Structured Sparsity and Hierarchical Task-Adaptive Power Management Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK A Wideband Digitally Assisted Frequency Tripler With Adaptively Optimized Output Power in 55-nm SiGe BiCMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1