Structural, Electrophysical, and Optical Characteristics of ZnO/Ag/Fe Thin Films of n- and p-Type Conductivity, Obtained by DC-Magnetron Method at Room Temperature

Abstract

Doped (Ag + Fe) zinc targets were obtained: Zn/Ag/Fe (Zn96, Ag2, Fe 2%; Zn94, Ag2, Fe 4%; and Zn90, Ag2, Fe 8%). ZnO/Ag/Fe films with n- and p- type conductivity were obtained on glass substrates at room temperature using the method of DC-magnetron sputtering of Zn/Ag/Fe targets in a gas mixture of Ar : O₂, in a vacuum of about 0.666 Pa. The structural, electrophysical, optical, and morphological characteristics of the obtained films were studied. The research was conducted using X-ray diffraction (XRD), atomic force microscopy, UV/VIS spectroscopy, and Hall measurements. The X-ray diffraction patterns of the ZnO/Ag/Fe films with n- and p-type conductivity showed characteristic reflections of interplanar distances on glass substrates along the crystallographic directions 100, 002, and 101. The transmittance of these films is about 85–95% in the wavelength range of 400–930 nm. The ZnO/Ag/Fe films with p-type conductivity have a concentration of free carriers on the order of 10¹⁸ cm^–3. The ZnO/Ag/Fe films obtained at room temperature of the substrate can be used in the development of functional optoelectronic devices.