Molecular Dynamics Simulation of Structural Transformations in the Conducting Channel of Memristors Based on Nonstoichiometric and Ion-Irradiated Silicon Oxides

Abstract

Using the molecular dynamics method, the processes of structural changes occurring over a period of approximately 100 ns in the filament region of a memristor, formed in nonstoichiometric silicon oxides, including those subjected to ion implantation, during forming and/or switching, were simulated. The influence of high temperature, at which the filament region is located during certain stages of the memristor’s operation, was also studied. It was shown that significant structural rearrangements occur over the specified time periods, consisting in the formation and disintegration of various complexes, which is confirmed by the calculations of radial distribution functions of distances between atoms in various combinations.