Ultralow Power Cold-Fuse Memory Based on Metal-Oxide-CNT Structure

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Nano Letters Pub Date : 2025-01-24 DOI:10.1021/acs.nanolett.4c06103

Wufan Chen, Xueping Li, Xuezhou Ma, Linxi Zhu, Yue Hu, Lian-Mao Peng, Chenguang Qiu

引用次数: 0

Abstract

One-time programmable (OTP) memory is an essential component in chips, which has extremely high security to protect the stored critical information from being altered. However, traditional OTP memory based on the thermal breakdown of the dielectric has a large programming current, which leads to high power consumption. Here, we report a gate tunneling-induced “cold” breakdown phenomenon in carbon nanotube (CNT) field-effect transistors, and based on this we construct a “cold” fuse (C-fuse) memory where applying a mild gate voltage can break down the CNT channel without damaging the gate dielectric. The C-fuse is intrinsically different from dielectric-breakdown OTP, and it exhibits extremely low programming current (10^–12 A), a large high-low resistance ratio (>10¹¹), and a long retention time (>10 years). As the first reported OTP memory based on low-dimensional nanomaterials, C-fuse memory exhibits excellent storage performance and good uniformity, demonstrating great potential in constructing next-generation secure storage circuits.

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基于金属-氧化物-碳纳米管结构的超低功耗冷熔丝存储器

一次性可编程存储器（OTP）是芯片的重要组成部分，它具有极高的安全性，可以保护存储的关键信息不被篡改。然而，传统的基于电介质热击穿的OTP存储器编程电流大，导致功耗高。在这里，我们报道了在碳纳米管（CNT）场效应晶体管中栅极隧道诱导的“冷”击穿现象，并在此基础上构建了一个“冷”保险丝（c -保险丝）存储器，在该存储器中施加温和的栅极电压可以击穿碳纳米管通道而不会损坏栅极介电。c熔断器本质上不同于介电击穿OTP，它具有极低的编程电流（10 - 12 A），大的高低电阻比（>1011）和长保持时间（>；10年）。c -保险丝存储器作为首个基于低维纳米材料的OTP存储器，具有优异的存储性能和良好的均匀性，在构建下一代安全存储电路方面具有很大的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.