Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures

IF 5.8 2区材料科学 Q2 CHEMISTRY, PHYSICAL Journal of Alloys and Compounds Pub Date : 2025-01-26 DOI:10.1016/j.jallcom.2025.178808

Ziyu Wang, Ying Wang, Hang Li, Yingnan Guo, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Michael E. Liao, Mark S. Goorsky, Baolai Liang

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Abstract

GaAsSb is a useful ternary semiconductor compound alloy and heterostructures made of GaSb_xAs_1-x facilitate versatile opto-electronic device applications. Thus, it is of significant importance to study carrier dynamics in GaAsSb and GaAsSb-containing heterostructures. This work investigated carrier localization mechanisms in GaAsSb and their influence on luminescence in both a single quantum well (QW) of 10 nm GaSb_0.1As_0.9 sandwiched between GaAs and a 250 nm bulk-like GaSb_0.1As_0.9 film on GaAs. Photoluminescence measurements reveal that for both samples the emission is impacted by exciton localization, however this is associated with different mechanisms in each sample. In the bulk film excitons become localized around Sb-composition fluctuations, while in the QW they localize along interface imperfections. Further spectral characterization demonstrates that both localized exciton (LE) and free exciton (FE) emission are indirect transitions in the QW. However, in bulk GaAsSb FE emission is direct, while LE emission is indirect. Therefore, the luminescence characteristics reflect different carrier dynamics that are correlated to the nature of the sample, i.e., depending on whether it is a QW or the bulk material.

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来源期刊

Journal of Alloys and Compounds 工程技术-材料科学：综合

CiteScore

11.10

自引率

14.50%

发文量

5146

审稿时长

67 days

期刊介绍： The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.