Single-X-Ray Sensitive Energy-Binning Dosimeter for Closed-Loop Cancer External-Beam Radiotherapy

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2025-01-28 DOI:10.1109/JSSC.2025.3529848
Rahul Lall;Kyoungtae Lee;Adam Cunha;Rebecca Abergel;Youngho Seo;Ali M. Niknejad;Mekhail Anwar
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Abstract

X-ray radiation dose delivered during cancer external-beam radiotherapy (EBRT) is nonlinear with the biological effect imparted to cancer cells and neighboring healthy tissues. This oftentimes leads to insufficient damage to cancer cells and excessive damage to the surrounding healthy tissues, both increasing toxicity and the risk of cancer recurrence later in life for many patients. An understanding of X-ray energy deposition at the single-X-ray level is, therefore, necessary to improve the efficacy of cancer radiotherapy. Here, we present a single-X-ray sensitive, energy-binning integrated circuit (IC)-based dosimeter, fabricated in 180 nm CMOS technology, to enable closed-loop cancer radiotherapy for personalized patient treatment. We use small $3{\times }3~{\mu }$ m reverse-biased deep n-well (DNWELL) diodes designed at low capacitive nodes ( ${C} {_{\mathrm {diode}}}$ ), such that the miniscule charge deposition ( ${Q} {_{\mathrm {dep}}}$ ) from single X-rays at these nodes generates a voltage signal large enough to be sensed ( ${V} {_{\mathrm {diode}}}{=}{Q} {_{\mathrm {dep}}}$ / ${C} {_{\mathrm {diode}}}$ ). In order to enable single-X-ray energy resolution without significant power and area, we implement an analog voltage supply (AVDDH) ~log resistor grid to create a sensitivity gradient across the $76{\times }55$ pixel array. The IC-based dosimeter was tested under scenarios consistent with the treatment of shallow lesions (e.g., skin cancer, superficial tumors, intraoperative radiotherapy). The system is highly linear with radiation dose (10–250 cGy) and accurately tracks dose up to 2 cm deep in tissue for 50-, 70-, and 100-kV X-ray beams.
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用于闭环肿瘤外束放射治疗的单x射线敏感能量盒剂量计
肿瘤外束放射治疗(EBRT)中x射线辐射剂量是非线性的,与肿瘤细胞和邻近健康组织的生物学效应有关。这通常会导致对癌细胞的损伤不足,而对周围健康组织的损伤过度,这既增加了毒性,也增加了许多患者晚年癌症复发的风险。因此,了解单x射线水平的x射线能量沉积对于提高癌症放疗的疗效是必要的。在这里,我们提出了一个单x射线敏感,能量存储集成电路(IC)为基础的剂量计,制造180纳米CMOS技术,使闭环癌症放疗的个性化患者治疗。我们使用小的$3{\times}3~{\mu}$ m反偏深n阱(DNWELL)二极管设计在低容性节点(${C} {_ \ mathm{二极管}}}$)上,使得这些节点上的单x射线的微小电荷沉积(${Q} {_ \ mathm{二极管}}}$)产生足够大的电压信号(${V} {_{\ mathm{二极管}}}=}{Q} {{\ mathm {deep}}}$ / ${C} {{\ mathm{二极管}}}$)。为了在没有显著功率和面积的情况下实现单x射线能量分辨率,我们实现了一个模拟电压电源(AVDDH) ~log电阻网格,以在$76{\times}55$像素阵列上创建灵敏度梯度。基于ic的剂量计在与浅层病变治疗相一致的情况下进行测试(例如,皮肤癌、浅层肿瘤、术中放疗)。该系统与辐射剂量(10-250 cGy)高度线性,并准确跟踪50、70和100千伏x射线束在组织中高达2厘米深的剂量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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