Innovations in Connector Terminal Design for Improved Signal Integrity in DDR5 Memory

Abstract

This article introduces an innovative connector terminal design for double data rate fifth-generation synchronous dynamic random-access memory (DDR5) connectors to enhance signal integrity in high-frequency memory systems. With the evolution of memory technology from DDR1 to DDR5, the requirements for higher transmission speeds and less signal distortion have necessitated more precise terminal designs. Simulations were conducted using ANSYS high-frequency structure simulator to assess the proposed stub design's high-frequency performance in terms of impedance, insertion loss (IL), return loss, and crosstalk (XT). Experimental results confirmed the superiority of the proposed design, which eliminates the 2.16 mm terminal stub from the conventional design. This modification minimized impedance variation, reduced IL by 0.2–0.4 dB in the 9–14.5 GHz frequency range, and enabled higher resonant frequencies in XT tests, thus enhancing signal integrity. These improvements hold significant promise for high-frequency applications, establishing a new design paradigm for DDR5 connector gold fingers and providing valuable insights for future high-speed memory interfaces.