Mujie Xu , Zining Wang , Rui Wang , Zhihong Yu , Zhenhao Sun , Bo Fu , Yujun Shi
{"title":"Morphology features of β-Ga2O3 bulk crystals by EFG and CZ methods: A review","authors":"Mujie Xu , Zining Wang , Rui Wang , Zhihong Yu , Zhenhao Sun , Bo Fu , Yujun Shi","doi":"10.1016/j.pcrysgrow.2024.100658","DOIUrl":null,"url":null,"abstract":"<div><div>High-quality crystals commonly exhibit regular morphology features and symmetries related to their crystal structures. The recognition of morphology features, especially on the shoulder morphology, will provide crucial guidance for the crystal growth and quality control. Here, the morphology features of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> bulk crystals were discussed from three aspects of growth technology, orientation of seed crystal as well as pulling and rotation rates. Combined with the theoretical morphology of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> crystal, the morphology features of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> bulk crystals under different growth conditions were illuminated and summarized. The hexagonal seed crystal was also demonstrated, and more suitable for the growth of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> bulk crystals with different principle surfaces by EFG method. The first review in the morphology features will become an important reference for future research on the growth of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> bulk crystals.</div></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"71 1","pages":"Article 100658"},"PeriodicalIF":4.5000,"publicationDate":"2024-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization of Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0960897424000433","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
High-quality crystals commonly exhibit regular morphology features and symmetries related to their crystal structures. The recognition of morphology features, especially on the shoulder morphology, will provide crucial guidance for the crystal growth and quality control. Here, the morphology features of β-Ga2O3 bulk crystals were discussed from three aspects of growth technology, orientation of seed crystal as well as pulling and rotation rates. Combined with the theoretical morphology of β-Ga2O3 crystal, the morphology features of β-Ga2O3 bulk crystals under different growth conditions were illuminated and summarized. The hexagonal seed crystal was also demonstrated, and more suitable for the growth of β-Ga2O3 bulk crystals with different principle surfaces by EFG method. The first review in the morphology features will become an important reference for future research on the growth of β-Ga2O3 bulk crystals.
期刊介绍:
Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research.
Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.