Determination of band alignment of core/shell colloidal CdSe/CdS quantum dots, by optical and X-ray photo-electron spectroscopies

Materials Today Quantum Pub Date : 2025-03-01 Epub Date: 2025-01-30 DOI:10.1016/j.mtquan.2025.100024
Damien Simonot , Céline Roux-Byl , Xiangzhen Xu , Willy Daney de Marcillac , Corentin Dabard , Mathieu G. Silly , Emmanuel Lhuillier , Thomas Pons , Simon Huppert , Agnès Maître
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Abstract

Optical properties of multilayer semi-conductor nano-emitters are crucially dependent on the relative energy levels of their different components. For core/shell quantum dots, the relative energy difference between conduction band edge of core and shell materials induces, depending on its value, either a confinement of the electron within the core or a delocalization of its wave function within the whole quantum dot. This results in drastic consequences on the energy and the oscillator strength of the transitions. Surprisingly, the literature currently lacks a definitive value for this energy difference, called offset, between the conduction band edge of CdSe and CdS materials. Here, we develop a theoretical model expressing energy levels and considering quantum dot dimension, core/shell interface pressure, ligands and allowing to reliably determine the conduction band offset. Its value is determined experimentally using our model and both optical and X-ray photoelectron (XPS) spectroscopies.
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用光学和x射线光电子能谱法测定核/壳胶体CdSe/CdS量子点的能带排列
多层半导体纳米发射器的光学特性主要取决于其不同组件的相对能级。对于核/壳层量子点,核和壳层材料的导带边缘之间的相对能量差,根据其值的不同,要么导致电子在核内的限制,要么导致其波函数在整个量子点内的离域。这对跃迁的能量和振子强度产生了剧烈的影响。令人惊讶的是,目前的文献对CdSe和CdS材料的传导带边缘之间的这种称为偏移的能量差缺乏一个明确的值。在这里,我们开发了一个表达能级的理论模型,并考虑了量子点尺寸,核/壳界面压力,配体,并允许可靠地确定导带偏移。它的值是用我们的模型和光学和x射线光电子(XPS)光谱实验确定的。
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