An 800-MHz 8.17-TOPS/W 0.63-TOPS/mm2 Memory-Utilization-Aware CNN Accelerator Featuring a Memory Stationary Dataflow

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2025-02-05 DOI:10.1109/JSSC.2025.3532544
Jixuan Li;Ke Li;Ka-Fai Un;Wei-Han Yu;Rui P. Martins;Pui-In Mak
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Abstract

Increasing the on-chip memory utilization (OCMU) is crucial for an area-efficient deep neural network accelerator. We propose a memory stationary (MS) dataflow to ingeniously combine the input and output features in a single memory block in a cyclic manner, significantly increasing the OCMU. The MS dataflow also reduces the feature memory access by 78.0%. Furthermore, residual paths in a ResNet model require large feature buffering. We introduce layer-wise clipped-asymmetric residual distillation (LCARD) quantization, removing the residual paths with minimal accuracy degradation. It dynamically assigns different feature/weight bit-widths for different layers, further enhancing the OCMU by $3.2{\times }$ and throughput by $4.5{\times }$ from a fixed bit-width (FBW) approach. We also present an MS gating (MSG) to skip the ineffective channels that improve the OCMU by $1.2{\times }$ and throughput by $1.3{\times }$ . Fabricated in a 28-nm CMOS process, the proposed accelerator exhibits an 8.17-TOPS/W peak energy efficiency and a 0.63-TOPS/mm2 peak area efficiency at 800 MHz and 0.9 V while requiring only a 120 kB on-chip static random-access memory (SRAM) for the ResNet-50.
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一个800-MHz 8.17-TOPS/W 0.63-TOPS/mm2内存利用感知CNN加速器,具有内存固定数据流
提高片上内存利用率(OCMU)对于区域高效的深度神经网络加速器至关重要。我们提出了一种内存平稳(MS)数据流,以循环的方式巧妙地将输入和输出特征组合在单个内存块中,显著提高了OCMU。MS数据流还减少了78.0%的功能内存访问。此外,ResNet模型中的剩余路径需要大量的特征缓冲。我们引入分层裁剪不对称残余蒸馏(LCARD)量化,以最小的精度退化去除残余路径。它动态地为不同的层分配不同的特征/权重位宽度,从固定位宽度(FBW)的方法进一步提高OCMU $3.2{\times}$和吞吐量$4.5{\times}$。我们还提出了一种MS门控(MSG)来跳过无效通道,使OCMU提高$1.2{\times}$,吞吐量提高$1.3{\times}$。该加速器采用28纳米CMOS工艺制造,在800 MHz和0.9 V下,峰值能量效率为8.17 tops /W,峰值面积效率为0.63 tops /mm2,而ResNet-50只需要120 kB的片上静态随机存取存储器(SRAM)。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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