Innovative multiscale simulation with experimental validation of ultrafast laser processing in silicon carbide (4H-SiC)

Abstract

This study explores the femtosecond laser ablation mechanism of silicon carbide(4H-SiC), a material renowned for its exceptional hardness and challenging machinability. Combining multiscale simulation techniques with experimental approaches, the ablation process induced by a single femtosecond laser pulse on 4H-SiC was successfully replicated. A multi-physics finite element method (FEM) model was developed, integrating the two-temperature model (TTM), the Fokker-Planck equation, and an ablation deformation framework. The FEM results demonstrated a deviation of <29 % from experimental data. Furthermore, an enhanced molecular dynamics (MD) model was established to address laser-semiconductor interactions and overcome challenges associated with semiconductor bandgaps. Simulation results showed strong agreement with experimental observations, validating the models and offering a robust theoretical foundation for semiconductor laser processing. These findings contribute to advancements in laser-based semiconductor manufacturing, with promising implications for high-end industrial applications.