{"title":"Elucidating the Role of Hierarchical Bonding, Electronegativity, and Chemical Pressure on the Thermoelectric Properties of Double Half Heuslers","authors":"Ankit Kumar, and , Prasenjit Ghosh*, ","doi":"10.1021/acsaem.4c0246510.1021/acsaem.4c02465","DOIUrl":null,"url":null,"abstract":"<p >Double half-Heusler (DHH) alloys (XY<sub>0.5</sub>Y<i>′</i><sub>0.5</sub>Z) stabilized by mixing two unstable HHs (XYZ and XY<i>′</i>Z) have been the subject of extensive research as an alternative to HHs for high-temperature thermoelectric applications because of the former’s low lattice thermal conductivity. In this work, using a combination of density functional theory (DFT)-based calculations and semiclassical Boltzmann transport theory, we elucidate the role of hierarchical bonding, reduction of electronegativity of X, and chemical pressure induced by variation in its atomic size on the electronic properties, transport, and thermoelectric properties, of a family of DHH compounds, namely, XFe<sub>0.5</sub>Ni<sub>0.5</sub>Sb (where X = Ti, Zr, and Hf). Compared to the parent compounds, we observe a larger variation in the nature of the bonds in the DHH lattice that aids in the reduction of their lattice thermal conductivity. Our calculations show that electronegativity in the X element and chemical pressure influence the band convergence observed in the conduction band of these materials in a reverse way. While reduction of electronegativity favors band convergence, tensile strain induced in the lattice due to the larger size of X is detrimental for the same. However, electronegativity has a much stronger effect. We observe that HfFe<sub>0.5</sub>Ni<sub>0.5</sub>Sb, which shows the largest band convergence, has the highest value of <i>zT</i> for n-type charge carriers among the three materials considered in our work. Moreover, hole-doped (p-type) HfFe<sub>0.5</sub>Ni<sub>0.5</sub>Sb also exhibits <i>zT</i> > 1. Therefore, we envisage that HfFe<sub>0.5</sub>Ni<sub>0.5</sub>Sb can be a good candidate for both the n and p legs of a thermoelectric device.</p>","PeriodicalId":4,"journal":{"name":"ACS Applied Energy Materials","volume":"8 3","pages":"1507–1517 1507–1517"},"PeriodicalIF":5.4000,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Energy Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaem.4c02465","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Double half-Heusler (DHH) alloys (XY0.5Y′0.5Z) stabilized by mixing two unstable HHs (XYZ and XY′Z) have been the subject of extensive research as an alternative to HHs for high-temperature thermoelectric applications because of the former’s low lattice thermal conductivity. In this work, using a combination of density functional theory (DFT)-based calculations and semiclassical Boltzmann transport theory, we elucidate the role of hierarchical bonding, reduction of electronegativity of X, and chemical pressure induced by variation in its atomic size on the electronic properties, transport, and thermoelectric properties, of a family of DHH compounds, namely, XFe0.5Ni0.5Sb (where X = Ti, Zr, and Hf). Compared to the parent compounds, we observe a larger variation in the nature of the bonds in the DHH lattice that aids in the reduction of their lattice thermal conductivity. Our calculations show that electronegativity in the X element and chemical pressure influence the band convergence observed in the conduction band of these materials in a reverse way. While reduction of electronegativity favors band convergence, tensile strain induced in the lattice due to the larger size of X is detrimental for the same. However, electronegativity has a much stronger effect. We observe that HfFe0.5Ni0.5Sb, which shows the largest band convergence, has the highest value of zT for n-type charge carriers among the three materials considered in our work. Moreover, hole-doped (p-type) HfFe0.5Ni0.5Sb also exhibits zT > 1. Therefore, we envisage that HfFe0.5Ni0.5Sb can be a good candidate for both the n and p legs of a thermoelectric device.
期刊介绍:
ACS Applied Energy Materials is an interdisciplinary journal publishing original research covering all aspects of materials, engineering, chemistry, physics and biology relevant to energy conversion and storage. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important energy applications.