Electronic and optical properties of the CrSSe/GaN heterostructures

Abstract

The integration of two-dimensional (2D) materials into van der Waals heterostructures (vdWHs) is regarded as an effective strategy for fabricating multifunctional devices. The article investigates the optical and electronic properties of SeCrS (SCrSe)/GaN vdWHs. The calculation that SeCrS (SCrSe)/GaN vdWHs exhibit type II band alignment and are mechanically and dynamically stable, displaying indirect and direct bandgaps, respectively. The SeCrS/GaN and SCrSe/GaN vdWHs significantly enhance optical absorption capabilities in the infrared and ultraviolet spectra compared to monolayer materials. The band alignment of heterostructures modulated by biaxial strain and applied electric field emerge met al. and type I band alignment. These findings suggest that SeCrS (SCrSe)/GaN vdWHs hold great potential for optical detectors and optoelectronic applications.