{"title":"Electrical and photo-sensing properties of n-ZnO/p-Si(111) heterojunction and persistent conductivity","authors":"K.J. Abhishek, Umananda M. Bhatta","doi":"10.1016/j.ssc.2025.115862","DOIUrl":null,"url":null,"abstract":"<div><div>Zinc thin films were first deposited on Si(111) substrate using DC Magnetron sputtering followed by oxidation at 800 °C to obtain <em>n</em>-ZnO/<em>p</em>-si(111) heterojunction. Formation of ZnO thin film on top of Si(111) substrate was confirmed by X-ray Diffraction. Current-Voltage (IV) characteristics taken in the dark indicated the formation of a p-n junction. Transient photo-conductivity and switching property of the heterojunction was tested for various incident radiations such as infrared (IR), Ultraviolet-A (UVA) and green radiations in the reverse bias condition. The heterojunction showed a good photo-response, especially for UV and IR radiation (sensitivity of 13.96 and 14.3 respectively). On switching off the radiation, persistent conductivity was observed, especially in the case of UV radiation.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115862"},"PeriodicalIF":2.1000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038109825000377","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Zinc thin films were first deposited on Si(111) substrate using DC Magnetron sputtering followed by oxidation at 800 °C to obtain n-ZnO/p-si(111) heterojunction. Formation of ZnO thin film on top of Si(111) substrate was confirmed by X-ray Diffraction. Current-Voltage (IV) characteristics taken in the dark indicated the formation of a p-n junction. Transient photo-conductivity and switching property of the heterojunction was tested for various incident radiations such as infrared (IR), Ultraviolet-A (UVA) and green radiations in the reverse bias condition. The heterojunction showed a good photo-response, especially for UV and IR radiation (sensitivity of 13.96 and 14.3 respectively). On switching off the radiation, persistent conductivity was observed, especially in the case of UV radiation.
期刊介绍：
Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged.
A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions.
The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.
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