A 0.028-mm2 32 -MHz RC Frequency Reference With an Inaccuracy of ±900 ppm From -40 ∘C to 125 ∘C and ±1600 ppm After Accelerated Aging

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2025-02-12 DOI:10.1109/JSSC.2025.3530944
Sining Pan;Yihang Cheng;Guohua Wu;Zhihua Wang;Kofi A. A. Makinwa;Huaqiang Wu
{"title":"A 0.028-mm2 32 -MHz RC Frequency Reference With an Inaccuracy of ±900 ppm From -40 ∘C to 125 ∘C and ±1600 ppm After Accelerated Aging","authors":"Sining Pan;Yihang Cheng;Guohua Wu;Zhihua Wang;Kofi A. A. Makinwa;Huaqiang Wu","doi":"10.1109/JSSC.2025.3530944","DOIUrl":null,"url":null,"abstract":"This article describes the design and implementation of a compact CMOS RC frequency reference based on N-type diffusion (N-diff) resistors and metal-insulator–metal (MIM) capacitors. It consists of a frequency-locked loop (FLL) that locks the period of a voltage-controlled oscillator (VCO) to the time it takes a current source to charge a capacitor to a reference voltage. Conventionally, the temperature compensation of such FLLs involves the use of resistors with different temperature dependencies. In this work, however, this is done by using two bipolar junction transistor (BJT)-based current sources with different temperature dependencies to charge a MIM capacitor and generate a reference voltage across an N-diff resistor, respectively. Implemented in a standard 180-nm technology, the resulting frequency reference achieves small size (0.028 mm2), moderate inaccuracy (±900 ppm) from <inline-formula> <tex-math>${-} 40~{^{\\circ }}$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$125~{^{\\circ }}$ </tex-math></inline-formula>C, and low drift (±1600 ppm) after accelerated aging. The versatility of the proposed temperature compensation scheme is validated by replacing the N-diff resistor with a P-poly resistor. However, the latter exhibits greater inaccuracy (+2000/−2500 ppm) and more drift (−2600/−8100 ppm) after accelerated aging.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 9","pages":"3257-3267"},"PeriodicalIF":5.6000,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10883038/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This article describes the design and implementation of a compact CMOS RC frequency reference based on N-type diffusion (N-diff) resistors and metal-insulator–metal (MIM) capacitors. It consists of a frequency-locked loop (FLL) that locks the period of a voltage-controlled oscillator (VCO) to the time it takes a current source to charge a capacitor to a reference voltage. Conventionally, the temperature compensation of such FLLs involves the use of resistors with different temperature dependencies. In this work, however, this is done by using two bipolar junction transistor (BJT)-based current sources with different temperature dependencies to charge a MIM capacitor and generate a reference voltage across an N-diff resistor, respectively. Implemented in a standard 180-nm technology, the resulting frequency reference achieves small size (0.028 mm2), moderate inaccuracy (±900 ppm) from ${-} 40~{^{\circ }}$ C to $125~{^{\circ }}$ C, and low drift (±1600 ppm) after accelerated aging. The versatility of the proposed temperature compensation scheme is validated by replacing the N-diff resistor with a P-poly resistor. However, the latter exhibits greater inaccuracy (+2000/−2500 ppm) and more drift (−2600/−8100 ppm) after accelerated aging.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
0.028-mm2 32mhz RC频率基准,在-40°C到125°C范围内误差为±900 ppm,加速老化后误差为±1600 ppm
本文描述了基于n型扩散(N-diff)电阻器和金属-绝缘体-金属(MIM)电容器的紧凑型CMOS RC频率基准的设计和实现。它由一个锁频环(FLL)组成,该锁频环将压控振荡器(VCO)的周期锁定为电流源将电容器充电到参考电压所需的时间。传统上,这种低功耗二极管的温度补偿涉及使用具有不同温度依赖性的电阻器。然而,在这项工作中,这是通过使用两个基于双极结晶体管(BJT)的电流源来完成的,这些电流源具有不同的温度依赖性,分别为MIM电容器充电,并在N-diff电阻上产生参考电压。采用标准的180纳米技术,得到的频率基准尺寸小(0.028 mm2),精度适中(±900 ppm),从${-}40~{^{\circ}}$ C到$125~{^{\circ}}$ C,加速老化后漂移低(±1600 ppm)。通过用p -聚电阻代替n -差阻电阻,验证了所提出的温度补偿方案的通用性。然而,后者在加速老化后表现出更大的不准确性(+2000/−2500 ppm)和更大的漂移(−2600/−8100 ppm)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
期刊最新文献
IEEE Journal of Solid-State Circuits Information for Authors TechRxiv: Share Your Preprint Research With the World! An Eye-Opening Arbiter PUF With Auto-Error Detection and PVT-Robust Masking Achieving a BER of 2e -8 Editorial New Associate Editors Guest Editorial Introduction to the Special Section on the 2025 Custom Integrated Circuits Conference (CICC)
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1