Design and analysis of trigate Ge pocket vertical tunnel FET for enhanced drive current

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering: B Pub Date : 2025-02-14 DOI:10.1016/j.mseb.2025.118096

Khushboo Singh, Ram Awadh Mishra, Kumari Nibha Priyadarshani

{"title":"Design and analysis of trigate Ge pocket vertical tunnel FET for enhanced drive current","authors":"Khushboo Singh, Ram Awadh Mishra, Kumari Nibha Priyadarshani","doi":"10.1016/j.mseb.2025.118096","DOIUrl":null,"url":null,"abstract":"<div><div>This paper describes a novel technique that adds triple gate and Ge pocket to vertical TFET in order to increase drive current and suppress ambipolarity in TFET. The proposed structures Trigate VTFET and Trigate Ge Pocket VTFET achieves subthreshold slope of 19.61 mV/dec and 15.62 mV/dec respectively and drive current enhancement of 300 µA/µm obtained in Trigate Ge pocket VTFET. Gate work function and gate dielectric engineering is utilized to optimize device performance also its susceptibility to temperature has been analyzed. Peak transconductance obtained for Trigate Ge Pocket VTFET and Trigate VTFET is 14.88 and 6.89 times higher as compared to its existing vertical TFET alternative. Furthermore, the analog characteristics of the device also enhances having the cut off frequency and GBW increases by 6.44 and 8.82 times for Ge pocket VTFET and 4.45 and 4.18 times for Trigate VTFET. This makes proposed device an appropriate choice for ultralow power, analog/RF applications.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"315 ","pages":"Article 118096"},"PeriodicalIF":3.9000,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725001199","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

This paper describes a novel technique that adds triple gate and Ge pocket to vertical TFET in order to increase drive current and suppress ambipolarity in TFET. The proposed structures Trigate VTFET and Trigate Ge Pocket VTFET achieves subthreshold slope of 19.61 mV/dec and 15.62 mV/dec respectively and drive current enhancement of 300 µA/µm obtained in Trigate Ge pocket VTFET. Gate work function and gate dielectric engineering is utilized to optimize device performance also its susceptibility to temperature has been analyzed. Peak transconductance obtained for Trigate Ge Pocket VTFET and Trigate VTFET is 14.88 and 6.89 times higher as compared to its existing vertical TFET alternative. Furthermore, the analog characteristics of the device also enhances having the cut off frequency and GBW increases by 6.44 and 8.82 times for Ge pocket VTFET and 4.45 and 4.18 times for Trigate VTFET. This makes proposed device an appropriate choice for ultralow power, analog/RF applications.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

求助全文

约1分钟内获得全文去求助

来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.