Da Pan , Ryota Yabushita , Daiki Oshima , Takeshi Kato
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引用次数: 0
Abstract
Spin-transfer torque combined with spin–orbit torque switching is considered a highly promising writing mechanism for advancing large storage density magnetic random-access memory with perpendicular magnetic anisotropy, due to its capability for field-free operation. Meantime, synthetic antiferromagnet has also gathered significant attention owing to its advantage in enhancing thermal stability while keeping the switching current low, which is crucial for achieving high-capacity MRAM. We manufactured Giant Magnetoresistance (GMR) devices utilizing a synthetic antiferromagnetic (SAF) free layer, and found that the SOT switching was assisted by STT even in SAF free layer, which has not been reported, and that the effect of STT assisting was significantly different from that for ferromagnetic free layer.
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The Journal of Magnetism and Magnetic Materials provides an important forum for the disclosure and discussion of original contributions covering the whole spectrum of topics, from basic magnetism to the technology and applications of magnetic materials. The journal encourages greater interaction between the basic and applied sub-disciplines of magnetism with comprehensive review articles, in addition to full-length contributions. In addition, other categories of contributions are welcome, including Critical Focused issues, Current Perspectives and Outreach to the General Public.
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