Da Pan , Ryota Yabushita , Daiki Oshima , Takeshi Kato
{"title":"Field-Free switching of Antiferromagnetically Coupled Co/Pd-Based perpendicular multi-layer via combined spin torques","authors":"Da Pan , Ryota Yabushita , Daiki Oshima , Takeshi Kato","doi":"10.1016/j.jmmm.2025.172872","DOIUrl":null,"url":null,"abstract":"<div><div>Spin-transfer torque combined with spin–orbit torque switching is considered a highly promising writing mechanism for advancing large storage density magnetic random-access memory with perpendicular magnetic anisotropy, due to its capability for field-free operation. Meantime, synthetic antiferromagnet has also gathered significant attention owing to its advantage in enhancing thermal stability while keeping the switching current low, which is crucial for achieving high-capacity MRAM. We manufactured Giant Magnetoresistance (GMR) devices utilizing a synthetic antiferromagnetic (SAF) free layer, and found that the SOT switching was assisted by STT even in SAF free layer, which has not been reported, and that the effect of STT assisting was significantly different from that for ferromagnetic free layer.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172872"},"PeriodicalIF":2.5000,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Magnetism and Magnetic Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0304885325001039","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Spin-transfer torque combined with spin–orbit torque switching is considered a highly promising writing mechanism for advancing large storage density magnetic random-access memory with perpendicular magnetic anisotropy, due to its capability for field-free operation. Meantime, synthetic antiferromagnet has also gathered significant attention owing to its advantage in enhancing thermal stability while keeping the switching current low, which is crucial for achieving high-capacity MRAM. We manufactured Giant Magnetoresistance (GMR) devices utilizing a synthetic antiferromagnetic (SAF) free layer, and found that the SOT switching was assisted by STT even in SAF free layer, which has not been reported, and that the effect of STT assisting was significantly different from that for ferromagnetic free layer.
期刊介绍：
The Journal of Magnetism and Magnetic Materials provides an important forum for the disclosure and discussion of original contributions covering the whole spectrum of topics, from basic magnetism to the technology and applications of magnetic materials. The journal encourages greater interaction between the basic and applied sub-disciplines of magnetism with comprehensive review articles, in addition to full-length contributions. In addition, other categories of contributions are welcome, including Critical Focused issues, Current Perspectives and Outreach to the General Public.
Main Categories:
Full-length articles:
Technically original research documents that report results of value to the communities that comprise the journal audience. The link between chemical, structural and microstructural properties on the one hand and magnetic properties on the other hand are encouraged.
In addition to general topics covering all areas of magnetism and magnetic materials, the full-length articles also include three sub-sections, focusing on Nanomagnetism, Spintronics and Applications.
The sub-section on Nanomagnetism contains articles on magnetic nanoparticles, nanowires, thin films, 2D materials and other nanoscale magnetic materials and their applications.
The sub-section on Spintronics contains articles on magnetoresistance, magnetoimpedance, magneto-optical phenomena, Micro-Electro-Mechanical Systems (MEMS), and other topics related to spin current control and magneto-transport phenomena. The sub-section on Applications display papers that focus on applications of magnetic materials. The applications need to show a connection to magnetism.
Review articles:
Review articles organize, clarify, and summarize existing major works in the areas covered by the Journal and provide comprehensive citations to the full spectrum of relevant literature.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
