A. Sh. Asvarov, A. K. Akhmedov, I. S. Volchkov, V. M. Kanevsky
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引用次数: 0
Abstract
The process of high-temperature oxidation of silicon carbide-based ceramic materials synthesized by spark plasma sintering without any sintering-activating additives has been studied. Analysis of the microstructure of the oxidized ceramic samples and the data on the change in their mass indicate the formation of a protective SiO2 layer on the SiC surface, which is characteristic of passive oxidation of silicon-containing oxygen-free compounds. The results of the comparative study of oxidation of the SiC ceramic samples with different porosity in air at a temperature of 1200°C have revealed a linear relationship between the growth rate of the oxidized sample mass and the volume of open pores in the sample.
期刊介绍：
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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