Palvinder Singh, Amit Sachdeva, Shruti Singh, M. Z. A. Yahya, Nor Mas Mira Abd Rahman, Rishi Pal
{"title":"Nanoscale NMOS Device Model Analysis and its Characteristics","authors":"Palvinder Singh, Amit Sachdeva, Shruti Singh, M. Z. A. Yahya, Nor Mas Mira Abd Rahman, Rishi Pal","doi":"10.1002/masy.202400191","DOIUrl":null,"url":null,"abstract":"<p>A 90 nm NMOS MOSFET model is simulated using Silvaco Visual T-CAD simulator. The materials used to simulate NMOS MOSFET are Al, Si, NpolySi, and SiO2. To overcome the problem of short circuits, lightly-doped drain (LDD) implantation is applied in NMOS model. The analysis of the model is determined with T-CAD simulator and obtained threshold voltage (<i>V</i><sub>th</sub>) 2.568 V, while keeping oxide thickness (<i>T</i><sub>ox</sub>) 2.373 nm and gate length 0.09 µm. The obtained result is compared with standard ITRS road map and gets almost similar results.</p>","PeriodicalId":18107,"journal":{"name":"Macromolecular Symposia","volume":"414 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Macromolecular Symposia","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/masy.202400191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Materials Science","Score":null,"Total":0}
引用次数: 0
Abstract
A 90 nm NMOS MOSFET model is simulated using Silvaco Visual T-CAD simulator. The materials used to simulate NMOS MOSFET are Al, Si, NpolySi, and SiO2. To overcome the problem of short circuits, lightly-doped drain (LDD) implantation is applied in NMOS model. The analysis of the model is determined with T-CAD simulator and obtained threshold voltage (Vth) 2.568 V, while keeping oxide thickness (Tox) 2.373 nm and gate length 0.09 µm. The obtained result is compared with standard ITRS road map and gets almost similar results.
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Macromolecular Symposia presents state-of-the-art research articles in the field of macromolecular chemistry and physics. All submitted contributions are peer-reviewed to ensure a high quality of published manuscripts. Accepted articles will be typeset and published as a hardcover edition together with online publication at Wiley InterScience, thereby guaranteeing an immediate international dissemination.
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