Simulation of electric field distribution of gas insulated switchgear considering metal tip defect locations and structural parameters

Abstract

Metal tip defect is a typical insulation defect in gas insulated switchgear (GIS). Simulation research on the defect under multi-physical field coupling was conducted in order to explore the realistic electric field distribution. The results of the simulation were confirmed by a partial discharge experiment. On the one hand, the influence of defect location and structural parameters on electric field distribution was investigated in the established defect model. On the other hand, the partial discharge experimental platform was built to obtain the initial voltage of partial discharge under this defect. The results show that the presence of the defects can increase the electric field distortion by several-fold or more in the surrounding electric field. The closer the defect on the outside of the conductor is to the basin-type insulator, the lower the electric field distortion is around the conductor. However, the opposite is true on the inside of the shell. The change in the top radius of the defect has the greatest impact on the electric field distribution. The experimental results verify the validity of the simulation model. This study augments the research on insulation defects in GIS, offering a valuable reference for the manufacturing and installation of GIS.