Photovoltaic characteristics of Au/n-Si Schottky structure with an interface of polyvinyl alcohol (PVA) thin film doped by erbium oxide (Er2O3) nanoparticles

Abstract

This paper investigates the photovoltaic properties of a Schottky photodiode (SPD) with an Au/PVA:Er₂O₃/n-Si structure under dark and various light intensities. An Er₂O₃-doped PVA thin film is used as an interlayer in a metal-nanocomposite-semiconductor (MNS) configuration. Techniques like XRD, AFM, UV–Vis, FTIR, and ATR characterize the Er₂O₃ nanostructure and PVA:Er₂O₃ composite. Key photovoltaic parameters like leakage current (I₀), potential barrier height (ΦB₀), ideality factor (n), resistances (Rs/Rsh), density of surface/interface states (N_ss), photocurrent (Iph), photosensitivity (S), responsivity (R), and detectivity (D∗) are analyzed. Increased light intensity raises I₀ and n values while reducing ΦB₀ and Rs. Linear photocurrent behavior is observed in Iph-P graphs at zero bias. The PVA:Er₂O₃ nanocomposite enhances photosensitivity (1.04 × 10⁴), responsivity (3.89 A/W), and detectivity (3 × 10¹¹ Jones). According to these findings, the Au/PVA:Er₂O₃/n-Si structure demonstrates a suitable photo-response and might appropriately take the position of conventional MS-type SPDs in photovoltaic and optoelectronic applications.