Second-harmonic generation in OP-GaAs0.75P0.25 heteroepitaxially grown from the vapor phase

IF 2.6 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY CrystEngComm Pub Date : 2025-02-18 DOI:10.1039/D4CE01304B
Li Wang, Shivashankar R. Vangala, Stefan Popien, Marcus Beutler, J. Matthew Mann, Vladimir L. Tassev, Edlef Büttner and Valentin Petrov
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Abstract

Second-harmonic generation using femtosecond pulses at 5.5 μm with a repetition rate of 80 MHz is demonstrated in ∼500 μm-thick layers of orientation-patterned GaAs0.75P0.25 grown using hydride vapor phase epitaxy on a structured GaAs template. The length of the sample used (∼500 μm) corresponds to only 4 quasi-phase matching periods of 8 coherence lengths.

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OP-GaAs0.75P0.25异质外延气相中二次谐波的产生
利用氢化物气相外延在结构GaAs模板上生长出约500 μm厚的定向图图化GaAs0.75P0.25层,证明了在5.5 μm的飞秒脉冲下,重复频率为80 MHz的二次谐波产生。所用样品的长度(~ 500 μm)仅对应4个准相位匹配周期,相干长度为8个。
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来源期刊
CrystEngComm
CrystEngComm 化学-化学综合
CiteScore
5.50
自引率
9.70%
发文量
747
审稿时长
1.7 months
期刊介绍: Design and understanding of solid-state and crystalline materials
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