Ab-initio computations of zirconium-doped barium sulfide’s induced ferromagnetism for spintronics applications

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Physica B-condensed Matter Pub Date : 2025-03-01 DOI:10.1016/j.physb.2025.417073
Abdelhamid Amahouch , Nadia Mediane , Rachid Ahl Laamara , Lalla Btissam Drissi
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Abstract

In this paper, within the framework of density functional theory (DFT), both with and without the Hubbard correction (U) and the spin–orbit coupling (SOC) effect, the changes in the electronic and magnetic characteristics of BaS brought by Zr doping at different concentrations ( from 3% to 8%) are examined. All computations show half-metallic ferromagnetic behavior with 100% polarization, with the exception of the GGA+SOC case, which results in metallic behavior. The ferromagnetic interaction in the material is caused by double exchange coupling. Our findings further show that the typical DFT description is greatly enhanced by the correction, both with the U-term alone and with SOC combined with the U correction. Lastly, Curie’s temperatures, which rise to 505 K, 690 K, and 770 K for GGA+U+SOC, GGA, and GGA+U, respectively, are higher than the room temperature, indicating the potential of Zr doped BaS for the future of spintronic industry.
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自旋电子学应用中锆掺杂硫化钡诱导铁磁性的ab -从头计算
本文在密度泛函理论(DFT)的框架下,研究了不同浓度(3% ~ 8%)Zr掺杂对BaS电子和磁特性的影响,并对是否存在Hubbard校正(U)和自旋轨道耦合(SOC)效应进行了研究。除GGA+SOC外,所有计算结果都显示出100%极化时的半金属铁磁行为,导致金属行为。材料中的铁磁相互作用是由双交换耦合引起的。我们的研究结果进一步表明,无论是单独使用U项还是结合SOC与U校正,校正后的典型DFT描述都得到了极大的增强。最后,GGA+U+SOC、GGA和GGA+U的居里温度分别达到505 K、690 K和770 K,均高于室温,表明Zr掺杂BaS在未来自旋电子工业中的潜力。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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