Performance analysis of near-infrared-transparent perovskite solar cells employing heterojunction perovskite layers: Simulation study

IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Journal of Physics and Chemistry of Solids Pub Date : 2025-03-03 DOI:10.1016/j.jpcs.2025.112662
Chenliang Zheng , Kaifeng Gong , Mingze Ou , Wenquan Zhou , Yanhua Zhang , Yuanyue Mao , Min Li , Rui Zhu , Jiang Wu , Zhihai Cheng
{"title":"Performance analysis of near-infrared-transparent perovskite solar cells employing heterojunction perovskite layers: Simulation study","authors":"Chenliang Zheng ,&nbsp;Kaifeng Gong ,&nbsp;Mingze Ou ,&nbsp;Wenquan Zhou ,&nbsp;Yanhua Zhang ,&nbsp;Yuanyue Mao ,&nbsp;Min Li ,&nbsp;Rui Zhu ,&nbsp;Jiang Wu ,&nbsp;Zhihai Cheng","doi":"10.1016/j.jpcs.2025.112662","DOIUrl":null,"url":null,"abstract":"<div><div>In the evolving field of photovoltaic development, the dual goals of enhancing efficiency and reducing costs pose significant challenges. While perovskite photovoltaics hold promise, the adoption of innovative technologies is essential for further advancement. Multi-junction solar cells, which are pivotal in addressing these challenges, are hindered by a lack of efficient design strategies to optimize energy conversion. In this work, the field is developed by using SCAPS-1D program to conduct a detailed analysis of the intrinsic properties of Cs<sub>2</sub>AgBiBr<sub>6</sub>/CsSnI<sub>3</sub> heterojunction tandem device. The results indicate that after analyzing defect density, carrier lifetime, diffusion length, and recombination rate, the optimal defect density for the perovskite layer is 1 × 10<sup>14</sup> cm<sup>−3</sup>. Further adjustments to the perovskite layer thickness reveal that the optimal thicknesses for Cs<sub>2</sub>AgBiBr<sub>6</sub> and CsSnI<sub>3</sub> are 50 nm and 350 nm, respectively. Comparative analysis of single-junction and multi-junction perovskite solar cells (PSCs) reveals that heterojunction tandem significantly enhances device performance. The proposed device structure (FTO/ZnOS/Cs<sub>2</sub>AgBiBr<sub>6</sub>/CsSnI<sub>3</sub>/P3HT/Au) achieves the optimal performance parameters, with a power conversion efficiency (PCE) of 33.70 %. Finally, the simulations assess the impact of variations in operational temperature and incident light intensity on cell performance, offering insights into the dynamics of multi-junction cells under actual working conditions. The findings show that the Cs<sub>2</sub>AgBiBr<sub>6</sub>/CsSnI<sub>3</sub> heterojunction significantly broadens the device's photoresponse range. Additionally, the formation of interface energy level spikes at the Cs<sub>2</sub>AgBiBr<sub>6</sub>/ZnOS interface significantly reduces the recombination of photogenerated charge carriers, thereby improving the overall device efficiency. These insights tackle key issues on optimizing multi-junction PSCs and lay a foundation for future research aiming at achieving practical, high-performance, inorganic lead-free perovskite solar cells. Additionally, this work marks a significant step forward in developing sustainable and economically viable solar energy solutions.</div></div>","PeriodicalId":16811,"journal":{"name":"Journal of Physics and Chemistry of Solids","volume":"201 ","pages":"Article 112662"},"PeriodicalIF":4.3000,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics and Chemistry of Solids","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022369725001131","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

In the evolving field of photovoltaic development, the dual goals of enhancing efficiency and reducing costs pose significant challenges. While perovskite photovoltaics hold promise, the adoption of innovative technologies is essential for further advancement. Multi-junction solar cells, which are pivotal in addressing these challenges, are hindered by a lack of efficient design strategies to optimize energy conversion. In this work, the field is developed by using SCAPS-1D program to conduct a detailed analysis of the intrinsic properties of Cs2AgBiBr6/CsSnI3 heterojunction tandem device. The results indicate that after analyzing defect density, carrier lifetime, diffusion length, and recombination rate, the optimal defect density for the perovskite layer is 1 × 1014 cm−3. Further adjustments to the perovskite layer thickness reveal that the optimal thicknesses for Cs2AgBiBr6 and CsSnI3 are 50 nm and 350 nm, respectively. Comparative analysis of single-junction and multi-junction perovskite solar cells (PSCs) reveals that heterojunction tandem significantly enhances device performance. The proposed device structure (FTO/ZnOS/Cs2AgBiBr6/CsSnI3/P3HT/Au) achieves the optimal performance parameters, with a power conversion efficiency (PCE) of 33.70 %. Finally, the simulations assess the impact of variations in operational temperature and incident light intensity on cell performance, offering insights into the dynamics of multi-junction cells under actual working conditions. The findings show that the Cs2AgBiBr6/CsSnI3 heterojunction significantly broadens the device's photoresponse range. Additionally, the formation of interface energy level spikes at the Cs2AgBiBr6/ZnOS interface significantly reduces the recombination of photogenerated charge carriers, thereby improving the overall device efficiency. These insights tackle key issues on optimizing multi-junction PSCs and lay a foundation for future research aiming at achieving practical, high-performance, inorganic lead-free perovskite solar cells. Additionally, this work marks a significant step forward in developing sustainable and economically viable solar energy solutions.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Physics and Chemistry of Solids
Journal of Physics and Chemistry of Solids 工程技术-化学综合
CiteScore
7.80
自引率
2.50%
发文量
605
审稿时长
40 days
期刊介绍: The Journal of Physics and Chemistry of Solids is a well-established international medium for publication of archival research in condensed matter and materials sciences. Areas of interest broadly include experimental and theoretical research on electronic, magnetic, spectroscopic and structural properties as well as the statistical mechanics and thermodynamics of materials. The focus is on gaining physical and chemical insight into the properties and potential applications of condensed matter systems. Within the broad scope of the journal, beyond regular contributions, the editors have identified submissions in the following areas of physics and chemistry of solids to be of special current interest to the journal: Low-dimensional systems Exotic states of quantum electron matter including topological phases Energy conversion and storage Interfaces, nanoparticles and catalysts.
期刊最新文献
Editorial Board Tailoring bismuth manganese oxide nanostructures for enhanced energy storage and conversion: Role of annealing temperature Controllable preparation of reduction graphene oxide materials with designated oxygen percentages and energy levels by catalysts Graphene-like SbP3 monolayer as a potential anode material for Na/K ion batteries: First-principles calculations Performance analysis of near-infrared-transparent perovskite solar cells employing heterojunction perovskite layers: Simulation study
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1