Calibration of P-bit for aligned stochastic outputs in probabilistic computing

IF 4.6 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering: B Pub Date : 2025-03-04 DOI:10.1016/j.mseb.2025.118146
Keunho Soh , Ji Eun Kim , Suk Yeop Chun , Jung Ho Yoon
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Abstract

Probabilistic computing has emerged as an innovative alternative to quantum annealing for addressing combinatorial optimization problems at ambient temperature. This study introduces a strategy for implementing and calibrating probabilistic bits using a simple structure centered on an ion-motion-mediated volatile threshold-switching memristor. The threshold switching memristor exhibits stochastic switching properties with bias-dependent controllable probabilities, enabling high-speed outputs proportional to the input signals. The probabilistic bit, as the computational unit of probabilistic computing, is calibrated by adjusting the signal amplitude and pulse width. This process achieves consistent output probabilities across multiple devices despite the device-to-device variation inherently associated with ion-motion-dediated memristors. The calibration approach is validated through simulations of a probabilistic full subtractor operation, highlighting its efficacy in enhancing the operational accuracy and reliability. These findings underscore the potential of calibrated probabilistic bits in enhancing probabilistic computing systems.

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概率计算中排列随机输出的p位校正
概率计算已经成为解决环境温度下组合优化问题的量子退火的创新替代方案。本研究介绍了一种使用以离子运动介导的挥发性阈值开关记忆电阻器为中心的简单结构来实现和校准概率比特的策略。阈值开关忆阻器具有随机开关特性,具有与偏置相关的可控概率,使高速输出与输入信号成正比。概率比特作为概率计算的计算单位,通过调整信号幅度和脉冲宽度来校准。该工艺在多个器件之间实现了一致的输出概率,尽管器件与器件之间的变化固有地与离子运动专用记忆电阻器相关。通过概率全减法运算的仿真验证了该方法的有效性,表明了该方法在提高运算精度和可靠性方面的有效性。这些发现强调了校准概率比特在增强概率计算系统方面的潜力。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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