Calibration of P-bit for aligned stochastic outputs in probabilistic computing

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering: B Pub Date : 2025-03-04 DOI:10.1016/j.mseb.2025.118146
Keunho Soh , Ji Eun Kim , Suk Yeop Chun , Jung Ho Yoon
{"title":"Calibration of P-bit for aligned stochastic outputs in probabilistic computing","authors":"Keunho Soh ,&nbsp;Ji Eun Kim ,&nbsp;Suk Yeop Chun ,&nbsp;Jung Ho Yoon","doi":"10.1016/j.mseb.2025.118146","DOIUrl":null,"url":null,"abstract":"<div><div>Probabilistic computing has emerged as an innovative alternative to quantum annealing for addressing combinatorial optimization problems at ambient temperature. This study introduces a strategy for implementing and calibrating probabilistic bits using a simple structure centered on an ion-motion-mediated volatile threshold-switching memristor. The threshold switching memristor exhibits stochastic switching properties with bias-dependent controllable probabilities, enabling high-speed outputs proportional to the input signals. The probabilistic bit, as the computational unit of probabilistic computing, is calibrated by adjusting the signal amplitude and pulse width. This process achieves consistent output probabilities across multiple devices despite the device-to-device variation inherently associated with ion-motion-dediated memristors. The calibration approach is validated through simulations of a probabilistic full subtractor operation, highlighting its efficacy in enhancing the operational accuracy and reliability. These findings underscore the potential of calibrated probabilistic bits in enhancing probabilistic computing systems.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"317 ","pages":"Article 118146"},"PeriodicalIF":3.9000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725001692","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Probabilistic computing has emerged as an innovative alternative to quantum annealing for addressing combinatorial optimization problems at ambient temperature. This study introduces a strategy for implementing and calibrating probabilistic bits using a simple structure centered on an ion-motion-mediated volatile threshold-switching memristor. The threshold switching memristor exhibits stochastic switching properties with bias-dependent controllable probabilities, enabling high-speed outputs proportional to the input signals. The probabilistic bit, as the computational unit of probabilistic computing, is calibrated by adjusting the signal amplitude and pulse width. This process achieves consistent output probabilities across multiple devices despite the device-to-device variation inherently associated with ion-motion-dediated memristors. The calibration approach is validated through simulations of a probabilistic full subtractor operation, highlighting its efficacy in enhancing the operational accuracy and reliability. These findings underscore the potential of calibrated probabilistic bits in enhancing probabilistic computing systems.

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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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