High-power AlGaInP waveguide 730 nm edge-emitting array

Abstract

To achieve high-power laser output with a low divergence angle, this study designs and fabricates a 730 nm high-power edge-emitting semiconductor laser array. The device incorporates GaAsP/AlGaInP highly strain-compensated quantum wells to achieve lasing at a wavelength of 730 nm. AlGaInP, a material with a wider bandgap than AlGaAs, is employed as the waveguide material to enhance carrier confinement within the active region effectively. The designed 730 nm semiconductor laser array delivers a single-chip output power of 10 W at the target wavelength while maintaining the low divergence angle typical of a 6 μm single-emitter array. Furthermore, it exhibits low power degradation even under high-temperature conditions. This laser array offers a robust solution for practical applications in high-power far-red laser illumination, optical imaging, and high-beam-quality laser systems.