Weina Li, Tianlei Ma, Pengyi Tang, Yunhong Luo, Hui Zhang, Jun Zhao, Rob Ameloot, Min Tu
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引用次数: 0
Abstract
Advancements in patterning techniques for metal–organic frameworks (MOFs) are crucial for their integration into microelectronics. However, achieving precise nanoscale control of MOF structures remains challenging. In this work, a resist-free method for patterning MOFs is demonstrated using extreme ultraviolet (EUV) lithography with a resolution of 40 nm. The role of halogen atoms in the linker and the effect of humidity are analyzed through in situ and near-ambient pressure synchrotron X-ray photoelectron spectroscopy. In addition to facilitating the integration of MOFs, the results offer valuable insights for developing the highly sought-after positive-tone EUV photoresists.
期刊介绍：
Advanced Science is a prestigious open access journal that focuses on interdisciplinary research in materials science, physics, chemistry, medical and life sciences, and engineering. The journal aims to promote cutting-edge research by employing a rigorous and impartial review process. It is committed to presenting research articles with the highest quality production standards, ensuring maximum accessibility of top scientific findings. With its vibrant and innovative publication platform, Advanced Science seeks to revolutionize the dissemination and organization of scientific knowledge.
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