Limits of BOSS DFT: O2 + Al(111) Dynamics on a Screened Hybrid Van der Waals DFT Potential Energy Surface

IF 3.2 3区 化学 Q2 CHEMISTRY, PHYSICAL The Journal of Physical Chemistry C Pub Date : 2025-03-06 DOI:10.1021/acs.jpcc.5c00327
R. A. B. van Bree, G. J. Kroes
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Abstract

The activated dissociative chemisorption (DC) of O2 on Al(111) is a thoroughly studied benchmark system for oxygen–metal interactions. However, research based on density functional theory (DFT) has not yet been able to accurately determine the electronic structure, and theory as a whole has so far been unable to reproduce measured sticking probabilities with chemical accuracy. Previous work has argued that this is likely due to the inability of DFT at the generalized gradient approximation (GGA) level to describe the barriers to DC of O2 on Al(111) correctly. The argument is that the most commonly applied electronic structure approach in surface science, which involves the use of GGA-DFT, yields too low reaction barriers for the DC of O2 on Al(111). Moreover, it seems that GGAs will generally fail to accurately predict barriers for systems with low charge transfer energy, i.e., systems for which charge transfer from metal to molecule at the transition state is likely. Subsequent work on both O2 + Al(111) and O2 + Cu(111) has suggested that screened hybrid density functionals (DF) yield more accurate barrier heights for DC on metal surfaces. However, so far the use of only a screened hybrid DF was not enough to ensure a highly accurate description for O2 + Al(111). Even though the onset of the sticking probability (S0) curve was correctly described, the slope, or width, of the curve was not. The use of a nonlocal correlation DF combined with an increased fraction of exact exchange in the screened hybrid exchange DF was believed to further improve the description of the electronic structure by increasing the energetic corrugation of the barrier. This approach was assumed to increase the width of the sticking curve without lowering the incidence energy for the reaction onset, thus reducing the slope of the sticking curve. To test this, we present quasi-classical trajectory (QCT) calculations on the O2 + Al(111) system based on a potential energy surface (PES) computed with the HSE06-1/2x-VdWDF2 screened hybrid van der Waals DF, using the Born–Oppenheimer static surface (BOSS) model. The resulting PES shows the presence of shallow van der Waals wells in the entrance channel. Furthermore, the barriers to DC show a slightly higher energetic corrugation than the previously used HSE03-1/3x screened hybrid DF, although most differences are smaller than 1 kcal/mol. These minor alterations in the PES with respect to previous work mean that the S0 computed for O2 + Al(111) using the HSE06-1/2x-VdWDF2 DF are somewhat improved over the previous results. Specifically, the onset of the S0 curve is now somewhat better described and the curve is broadened a little compared to the HSE03-1/3x description. These results, in combination with previous studies, imply that future electronic structure methods would need to provide larger changes in the PES, or a different dynamical model would need to be used to bring theory in better agreement with the experiment. Moreover, future higher-level theory also needs to address the currently very demanding computational costs of screened hybrid plane-wave-DFT for molecule-metal interactions.

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BOSS DFT: O2 + Al(111)在屏蔽混合范德华DFT势能面上的动力学极限
O2在Al(111)上的活化解离化学吸附(DC)是氧-金属相互作用的一个深入研究的基准体系。然而,基于密度泛函理论(DFT)的研究尚未能够准确地确定电子结构,并且到目前为止,理论作为一个整体还无法以化学精度再现测量的粘附概率。先前的研究认为,这可能是由于DFT在广义梯度近似(GGA)水平上无法正确描述O2在Al(111)上的DC势垒。论点是,表面科学中最常用的电子结构方法,包括使用GGA-DFT,对于O2在Al上的直流反应产生的反应势垒太低(111)。此外,对于电荷转移能较低的系统,也就是在过渡态下电荷有可能从金属转移到分子的系统,GGAs似乎通常不能准确地预测势垒。随后对O2 + Al(111)和O2 + Cu(111)的研究表明,经过筛选的杂化密度泛函(DF)可以在金属表面产生更精确的直流势垒高度。然而,到目前为止,仅使用筛选的混合DF不足以确保O2 + Al的高度准确描述(111)。即使粘着概率(S0)曲线的起始点被正确描述,但曲线的斜率或宽度却没有被正确描述。使用非局域相关DF与筛选的混合交换DF中精确交换的增加比例相结合,被认为通过增加势垒的能量波纹进一步改善了电子结构的描述。假设这种方法可以在不降低反应起始入射能的情况下增加粘着曲线的宽度,从而减小粘着曲线的斜率。为了验证这一点,我们使用Born-Oppenheimer静态面(BOSS)模型,基于hse06 -1/2 - vdwdf2筛选的混合范德瓦尔斯DF计算的势能面(PES),对O2 + Al(111)体系进行了准经典轨迹(QCT)计算。结果表明,在入口通道存在浅层范德华斯井。此外,与先前使用的HSE03-1/3x筛选的混合DF相比,DC势垒表现出略高的能量波纹,尽管大多数差异小于1 kcal/mol。相对于以前的工作,PES中的这些微小变化意味着使用HSE06-1/2x-VdWDF2 DF计算O2 + Al(111)的S0比以前的结果有所改善。具体来说,与HSE03-1/3x描述相比,现在对S0曲线的起始点有了更好的描述,曲线也稍微拓宽了一些。这些结果与先前的研究相结合,意味着未来的电子结构方法需要提供更大的PES变化,或者需要使用不同的动力学模型来使理论与实验更好地一致。此外,未来更高层次的理论还需要解决目前筛选平面波- dft混合分子-金属相互作用的非常苛刻的计算成本。
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来源期刊
The Journal of Physical Chemistry C
The Journal of Physical Chemistry C 化学-材料科学:综合
CiteScore
6.50
自引率
8.10%
发文量
2047
审稿时长
1.8 months
期刊介绍: The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.
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