Radiation attenuation parameters and intrinsic efficiency of a few semiconductor crystals for radiation detection applications

Abstract

This study investigates the effectiveness of nine inorganic semiconductor crystals − LiGaSe₂, LiInSe₂, CsHgInS₃, SnS, GaTe, BiI₃, Sb₂Te₃, Tl₄CdI₆, and TlBr − for radiation detection applications based on photon and charged particle (electrons, protons, and heavy ions) interaction parameters. Mass attenuation coefficient (μ/ρ), half value layer (HVL), relaxation length (λ), effective atomic number (Z_eff), electron density (N_eff), equivalent atomic number (Z_eq), and exposure buildup factor (EBF) were computed using PAGEX software. These results, along with their intrinsic efficiencies calculated, were compared with that of standard materials (NaI(Tl), CdZnTe, and CdTe). The μ/ρ values of the studied semiconducting materials are ranked in the decreasing order as: TlBr, Tl₄CdI₆, BiI₃, CsHgInS₃, Sb₂Te₃, GaTe, SnS, LiInSe₂, and LiGaSe₂. TlBr, Tl₄CdI₆, BiI₃, and Sb₂Te₃ show superior photon detection capabilities compared to the reference materials. TlBr and Tl₄CdI₆ have the highest intrinsic efficiency across nearly all energy regions, while LiGaSe₂ has the lowest. Interaction parameters like range and Z_eff for charged particles were also computed using standard databases, with SnS and Sb₂Te₃ showing the least range for all the charged particles studied throughout the entire energy region. The study indicates that TlBr and Tl₄CdI₆ have strong potential for developing next-generation radiation detectors with enhanced sensitivity, addressing needs in healthcare and national security.