{"title":"Development of Inductive Energy Storage Pulsed Power Generator Using GaN Power Semiconductor Switches","authors":"Yuki Oneda, Momo Fujimi, Kazuki Nagao, Taichi Sugai, Akira Tokuchi, Weihua Jiang","doi":"10.1002/eej.23488","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>Characterizations of pulsed power output for pulsed power generator using GaN FET have been evaluated and compared with using SiC-MOS FET. The fast rise/fall time of output voltage without the dependance on the dummy load has attractive feathers. However, the surge voltage between drain and source terminals, exceeding the maximum rating occurred due to the fast turn-off speed feathers of Gallium nitride (GaN) FET, which has limited the power capability. The inductive energy storage pulsed power generator using GaN FETs as opening switches has developed, and the output obtains a maximum voltage of ∼900 V with rise/fall time of <20 ns. The fast current interruption characteristics by the turn-off of GaN FET lead to high voltage-pulsed output.</p>\n </div>","PeriodicalId":50550,"journal":{"name":"Electrical Engineering in Japan","volume":"218 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Engineering in Japan","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/eej.23488","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
Characterizations of pulsed power output for pulsed power generator using GaN FET have been evaluated and compared with using SiC-MOS FET. The fast rise/fall time of output voltage without the dependance on the dummy load has attractive feathers. However, the surge voltage between drain and source terminals, exceeding the maximum rating occurred due to the fast turn-off speed feathers of Gallium nitride (GaN) FET, which has limited the power capability. The inductive energy storage pulsed power generator using GaN FETs as opening switches has developed, and the output obtains a maximum voltage of ∼900 V with rise/fall time of <20 ns. The fast current interruption characteristics by the turn-off of GaN FET lead to high voltage-pulsed output.
期刊介绍：
Electrical Engineering in Japan (EEJ) is an official journal of the Institute of Electrical Engineers of Japan (IEEJ). This authoritative journal is a translation of the Transactions of the Institute of Electrical Engineers of Japan. It publishes 16 issues a year on original research findings in Electrical Engineering with special focus on the science, technology and applications of electric power, such as power generation, transmission and conversion, electric railways (including magnetic levitation devices), motors, switching, power economics.
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