A. V. Tyazhev, I. D. Chsherbakov, L. K. Shaimerdenova, A. V. Shemeryankina, P. V. Kosmachev, S. V. Panin
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引用次数: 0
Abstract
The paper presents calculation of current–voltage characteristics of Me-i-Me HR-GaAs:Cr structures compared with the experimental data. With respect to the voltage redistribution to an extremely high resistance of the i-layer, the current flow is limited by processes in the space charge region of the reverse-biased Schottky barrier formed at the i-Me interface.
期刊介绍：
Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.
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