Investigation and comparison of various properties of diodes made using PTCDA and its synthesized ligand and brominated derivative

Abstract

First, the ligand (PTC) and brominated derivative (Br₂PTCDA) of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA), whose structures were confirmed by FTIR and ¹H NMR spectra, were synthesized. Then, three new diodes were made using PTCDA, PTC, and Br₂PTCDA as interface layers. The current–voltage (I–V) graphs of the diodes were determined for both dark environment and environments exposed to different illumination intensities (DIIs). The ideality factor (n) and rectification ratio (RR) values of Al/PTCDA/p-Si, Al/PTC/p-Si, and Al/Br₂PTCDA/p-Si diodes for dark environment were determined as 2.243 and 365.51, 2.333 and 152.55, and 2.941 and 20.5, respectively. The n and RR values show that the Al/PTCDA/p-Si diode is both more ideal and more efficient than the other two diodes. The n values ​​obtained for environments under DIIs (30, 40, 60, 80, and 100 mW cm⁻²) also showed that the Al/PTCDA/p-Si diode is more ideal than the other diodes, provided that the illumination intensity is the same.