Ion implantation-driven high-quality graphene growth on insulating substrates with catalyst spatial confinement

Abstract

Graphene is widely recognized for its exceptional electrical and thermal conductivity, as well as its remarkable optical and mechanical properties. These unique characteristics make it highly attractive for applications in integrated circuits, field-effect transistors, optoelectronic devices, and sensors. However, transferring graphene grown on metal substrates to semiconductor or insulating substrates typically involves a complex procedure that may lead to material degradation and wrinkle formation. Therefore, direct growth of high-quality graphene on these substrates is particularly important. In this study, we present a synergistic strategy that combines ion implantation of metal ions with catalyst spatial confinement to grow high-quality graphene. This method not only significantly reduced the growth time and improved the uniformity of the graphene but also effectively reduced metal residues. Furthermore, we investigated the molecular behavior within micrometer-sized confined spaces, which extended the active lifespan of the catalysts and increased the supersaturation of carbon species. This synergistic strategy provides valuable guidance for the controlled growth of other two-dimensional materials.