D. A. Vinnik, A. I. Kovalev, D. P. Sherstyuk, D. E. Zhivulin, G. M. Zirnik, T. V. Batmanova
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引用次数: 0
Abstract
A solid-phase synthesis of the InGaZn2O5 semiconductor oxide is reported; its phase composition, structure, and morphology are analyzed using XRD, full-profile XRD analysis, scanning electron microscopy, energy-dispersive X-ray spectroscopy, IR spectroscopy, and Raman spectroscopy. It is shown that the studied compound corresponds to the InGaZn2O5 structure, P63/mmc space group; its structural parameters are reported. The sample prepared under the chosen conditions has morphology characterized by polydispersity, presence of agglomerates, and by the absence of pronounced crystallite faceting. IR and Raman spectra of InGaZn2O5 are reported for the first time.
期刊介绍：
Journal is an interdisciplinary publication covering all aspects of structural chemistry, including the theory of molecular structure and chemical bond; the use of physical methods to study the electronic and spatial structure of chemical species; structural features of liquids, solutions, surfaces, supramolecular systems, nano- and solid materials; and the crystal structure of solids.
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