Compact on-chip silicon TM polarizer with ultra-wide bandwidth covering all ITU optical communication bands up to the 2 μm mid-infrared

IF 2.5 3区 物理与天体物理 Q2 OPTICS Optics Communications Pub Date : 2025-06-01 Epub Date: 2025-03-08 DOI:10.1016/j.optcom.2025.131737
Chen Zhang , Panlai Li , Wenya Guo , Ting Feng , Xiaofei Gu , Shengbao Wu
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Abstract

On-chip silicon polarizers with broad operating bandwidth and compact footprint have recently attracted increasing attention for their applications in large capacity and high density integrated optical systems. In this paper, we present, to the best of our knowledge, the highest bandwidth TM-pass polarizer based on hybrid plasmonic waveguides engineered with subwavelength gratings. The device's bandwidth spans all ITU-defined optical communication bands. Additionally, by flexibly adjusting the device parameters, the operating bandwidth can be extended into the 2 μm mid-infrared (MIR) region. The use of a rib waveguide structure on a silicon-on-insulator wafer with a thicker silicon device layer enables significant spatial differences between the TE and TM mode field distributions. In regions where the TE mode dominates, Cr metal with high absorption loss is strategically placed, enabling low-loss transmission for the TM mode while rapidly attenuating the TE mode. To validate the design concept, we developed two device configurations with different lengths of 8 μm and 12 μm. Numerical results indicate that for the 8 μm design, the device achieves an operating bandwidth of 748 nm (1148 nm–1896 nm) with an insertion loss (IL) < 1 dB and a polarization extinction ratio (PER) > 20 dB. If the IL requirement is relaxed to 2 dB while maintaining a PER above 20 dB, the operating bandwidth extends to 1189 nm (1141 nm–2330 nm). For the 12 μm design, the device achieves an operating bandwidth of 620 nm (1148 nm–1768 nm) with IL < 1 dB and PER >20 dB. With IL < 3 dB and PER >20 dB, the operating bandwidth reaches 1209 nm (1141 nm–2350 nm). Additionally, we optimized the waveguide structure parameters to design a low-loss configuration around the 2 μm band. This work offers a new approach for creating compact, ultra-broadband on-chip polarizers with potential applications in high-capacity, high-density optical interconnects and optical communication systems.
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紧凑的片上硅TM偏振片,具有超宽带带宽,覆盖到2 μm中红外的所有国际电联光通信频段
片上硅偏振片具有宽的工作带宽和紧凑的占地面积,近年来在大容量和高密度集成光学系统中的应用越来越受到人们的关注。在本文中,我们提出,据我们所知,最高带宽的tm通偏振器基于混合等离子波导与亚波长光栅工程。该设备的带宽跨越所有itu定义的光通信频段。此外,通过灵活调整器件参数,可以将工作带宽扩展到2 μm的中红外(MIR)区域。在具有较厚硅器件层的绝缘体上的硅晶圆上使用肋波导结构,使得TE和TM模式场分布之间存在显著的空间差异。在TE模式占主导地位的区域,策略性地放置具有高吸收损耗的Cr金属,从而实现TM模式的低损耗传输,同时快速衰减TE模式。为了验证设计概念,我们开发了两种长度为8 μm和12 μm的器件配置。数值结果表明,对于8 μm设计,器件实现了748 nm (1148 nm - 1896 nm)的工作带宽,插入损耗(IL) <;1 dB和偏振消光比(PER) >;20分贝。如果将IL要求放宽到2db,同时保持高于20db的PER,则工作带宽将扩展到1189 nm (1141 nm - 2330 nm)。对于12 μm设计,该器件通过IL <实现了620 nm (1148 nm - 1768 nm)的工作带宽;1 dB和PER 20 dB。与IL <;3 dB和PER >;20 dB,工作带宽达到1209 nm (1141 nm - 2350 nm)。此外,我们优化了波导结构参数,设计了2 μm波段附近的低损耗配置。这项工作为创建紧凑的超宽带片上偏振器提供了一种新方法,在高容量、高密度光互连和光通信系统中具有潜在的应用前景。
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来源期刊
Optics Communications
Optics Communications 物理-光学
CiteScore
5.10
自引率
8.30%
发文量
681
审稿时长
38 days
期刊介绍: Optics Communications invites original and timely contributions containing new results in various fields of optics and photonics. The journal considers theoretical and experimental research in areas ranging from the fundamental properties of light to technological applications. Topics covered include classical and quantum optics, optical physics and light-matter interactions, lasers, imaging, guided-wave optics and optical information processing. Manuscripts should offer clear evidence of novelty and significance. Papers concentrating on mathematical and computational issues, with limited connection to optics, are not suitable for publication in the Journal. Similarly, small technical advances, or papers concerned only with engineering applications or issues of materials science fall outside the journal scope.
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